GaN-Based Semiconductor Light Emitting Device Strain Management
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in managing stress and improving light efficiency due to strain transferred to the active layer, which affects the performance and reliability of the devices.
Innovation Solution
The implementation of super lattice layers and buffer layers below the active layer helps to attenuate strain and achieve a flat energy band by varying the composition ratio of materials in the active layer, thereby enhancing the semiconductor light emitting device's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If super lattice layers and buffer layers are added below the active layer, then strain is reduced and electro-static discharge properties are improved, but device structure becomes more complex
Solution Approach 1:
Super lattice layers and buffer layers are introduced as intermediary structures between the substrate and the active layer. These intermediate layers serve as mediators that gradually transition the strain from the substrate to the active layer, preventing direct stress transfer while maintaining device functionality. The super lattice structure acts as a strain management intermediary that improves electro-static discharge properties without requiring complete redesign of the entire device architecture.
Solution Approach 2:
The device structure is segmented into multiple functional layers including substrate, buffer layers, super lattice layers, and active layer. This segmentation allows each layer to be optimized for its specific function - the buffer and super lattice layers handle strain management while the active layer focuses on light emission. By dividing the structure into discrete functional segments, the patent achieves improved reliability while keeping each individual layer relatively simple.
2Loss of energy
If composition ratio of materials in active layer is varied to achieve flat energy band, then luminous efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent systematically varies the composition ratio of materials in the active layer to achieve the desired flat energy band configuration. By changing compositional parameters (such as indium gallium nitride ratios) across different regions of the active layer, the energy band structure is optimized for improved luminous efficiency. This parameter change approach allows continuous optimization of light emission while maintaining compatibility with existing manufacturing processes.
Solution Approach 2:
Different composition ratios are applied to different regions within the active layer to create local quality variations. The active layer is not uniformly composed but rather has spatially varying material compositions tailored to achieve the flat energy band configuration in specific regions. This local quality approach allows precise control of energy band structure where needed while simplifying manufacturing in other regions.
Data Source
AI summary
Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.