GaN LED Transfer via Handle Substrate for Flexible Displays

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Solution Overview

Problem

Current methods for making and assembling electronic devices, particularly flexible and LED arrays, face challenges in efficiently transferring and integrating semiconductor structures onto device substrates while maintaining structural integrity and electrical functionality.

Innovation Solution

The method involves epitaxial growth of semiconductor epilayers on a growth substrate, bonding to a handle substrate, patterning, etching, and transferring these structures via dry transfer contact printing to a device substrate, allowing for the assembly of flexible electronic devices and LED arrays with precise control over layer composition and structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional methods are used to transfer semiconductor structures onto device substrates, then the transfer process is simple, but the structural integrity and electrical functionality are compromised

Engineering Contradiction:
Improvestructural integrity and electrical functionalityVSAvoidtransfer process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent introduces an intermediary handle substrate that temporarily supports the semiconductor epilayer during processing and transfer. This handle substrate acts as a mediator between the growth substrate and the final device substrate, enabling precise transfer while maintaining structural integrity and electrical functionality of the semiconductor structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent segments the manufacturing process into distinct stages: growth on a first substrate, release, transfer to a handle substrate, processing, and final transfer to the device substrate. This segmentation allows each stage to be optimized independently, improving overall reliability while managing complexity through systematic process division.

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If flexible and large-area substrates are used for device fabrication, then adaptability and versatility are improved, but manufacturing precision and structural integrity deteriorate

Engineering Contradiction:
Improvesubstrate flexibility and large-area capabilityVSAvoidstructural integrity during processing
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent performs preliminary processing of the semiconductor epilayer on the rigid handle substrate before final transfer to the flexible device substrate. This preliminary action includes completing critical alignment and patterning steps while the structure is supported by a stable platform, ensuring manufacturing precision is maintained even when the final substrate is flexible or large-area.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If multiple processing steps are performed to maintain structural integrity, then reliability is improved, but productivity and manufacturing efficiency deteriorate

Engineering Contradiction:
Improvestructural integrityVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges multiple processing steps by performing release, transfer, and initial processing operations in an integrated sequence on the handle substrate. This consolidation reduces the number of separate handling operations and improves manufacturing efficiency while maintaining structural integrity through the protective handle substrate support.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of high-quality, flexible electronic devices and LED arrays with improved structural integrity and electrical performance, enabling scalable production and integration on various substrates, including flexible and large-area formats.

Implementation Method 1

forming a semiconductor epilayer on the receiving surface via epitaxial growth

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 2

bonding the first contact surface of the semiconductor epilayer to a handle substrate

Methodology Applied
Scientific EffectBonding: Welding

Implementation Method 3

the sacrificial layer is optically filtered by the undoped GaN film to remove at least a portion of the electromagnetic radiation absorbed by the sacrificial layer

Methodology Applied
Scientific EffectAbsorption of electromagnetic radiation: Absorption (EM radiation)

Data Source

PatentUS10546841B2Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
Publication Date: 2020.01.28 THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS
  • US10546841B2 patent drawing
  • US10546841B2 patent drawing
  • US10546841B2 patent drawing

AI summary

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.