GaN LED Trilateral Chip Light Extraction

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Solution Overview

Problem

Existing solid state lighting techniques, particularly GaN-based LEDs, face challenges in achieving high intensity and efficiency, especially for green LEDs, and are costly to produce on a wide scale due to difficulties in manufacturing and light extraction efficiency.

Innovation Solution

The method involves shaping gallium and nitrogen containing substrate structures into tetragonal shapes with non-orthogonal sidewalls, using a saw process with rotating blade structures to form trenches and detach chips, which enhances light extraction efficiency by reducing internal reflections and absorption losses.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional square or rectangular chip shapes are used, then manufacturing is simple, but light extraction efficiency is low due to internal reflections at orthogonal angles

Engineering Contradiction:
Improvechip shaping simplicityVSAvoidlight extraction efficiency
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent applies asymmetry by changing the chip shape from conventional square or rectangular forms to trilateral (triangular) configurations. This asymmetric geometry eliminates orthogonal angles that cause internal reflections, thereby improving light extraction efficiency while remaining manufacturable through standard semiconductor fabrication processes.

Inventive Principle:
Principle #4Asymmetry

2Strength

If substrate thickness is increased to maintain reasonable aspect ratios, then chip structural integrity is improved, but light extraction path length increases causing higher absorption losses

Engineering Contradiction:
Improvechip structural integrityVSAvoidabsorption losses
Core Design Contradiction:
StrengthVSLoss of energy

Solution Approach 1:

The patent addresses this contradiction by transitioning from a two-dimensional planar chip structure to a three-dimensional trilateral configuration. This dimensional change allows the chip to achieve sufficient structural integrity through its geometric form while simultaneously reducing the light extraction path length through the substrate, thereby minimizing absorption losses.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If GaN-based LEDs are produced on wide scale, then production volume increases, but manufacturing cost remains high due to production difficulties

Engineering Contradiction:
Improveproduction volumeVSAvoidmanufacturing difficulty
Core Design Contradiction:
ProductivityVSEase of manufacture

Solution Approach 1:

The patent applies segmentation by dividing the substrate into multiple trilateral chip structures that can be independently extracted and processed. This segmentation approach enables parallel manufacturing of multiple chips from a single substrate, increasing production volume while the standardized trilateral geometry simplifies the manufacturing process and reduces costs through scalability.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9076926B2Gallium and nitrogen containing trilateral configuration for optical devices
Publication Date: 2015.07.07 KORRUS INC
  • US9076926B2 patent drawing
  • US9076926B2 patent drawing
  • US9076926B2 patent drawing

AI summary

Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.