GaN Light Emitting Element with Optimized Confinement Layer
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Solution Overview
Problem
Semiconductor light emitting elements using group III nitride semiconductors face challenges in achieving monochromacy due to broad distribution of emission wavelengths, particularly for green-colored light emission.
Innovation Solution
A semiconductor light emitting element is designed with a specific structure including an n-type semiconductor layer, a light emitting layer with multiple quantum well and barrier layers, and a p-type semiconductor layer with a confinement layer, optimized in thickness and composition to confine carriers and reduce wavelength distribution, using GaN and GaInN materials with precise doping and layer thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a light emitting layer is configured to emit green light by adjusting the composition of group III nitride semiconductor, then the light emission wavelength can be tuned to green color, but large deformation occurs in the light emitting layer and the distribution of light emission wavelength becomes broad
Solution Approach 1:
The light emitting layer is divided into multiple quantum well structures with alternating well layers and barrier layers. Each well layer is composed of GaInN and each barrier layer is composed of GaN, creating a segmented structure that confines carriers and reduces wavelength distribution while maintaining green light emission capability.
Solution Approach 2:
Different regions of the light emitting layer are assigned different material compositions and functions. The well layers use GaInN for light emission, while the barrier layers use GaN for carrier confinement and deformation reduction. This local differentiation allows optimization of each region's properties to achieve both green light emission and narrow wavelength distribution.
2Reliability
If the confinement layer thickness is increased to improve carrier confinement, then carrier confinement efficiency improves, but the device structure becomes more complex and manufacturing difficulty increases
Solution Approach 1:
The confinement layer thickness is optimized to a specific parameter range (not more than 3 times the well layer thickness) to achieve effective carrier confinement. This parameter optimization balances the confinement efficiency with manufacturing feasibility, avoiding excessive thickness that would increase complexity while maintaining sufficient confinement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optimized structure improves monochromacy by reducing the spectrum half width of green light emission, enhancing the light emitting element's spectral purity and efficiency.
Implementation Method 1
a light emitting layer that is laminated on the n-type semiconductor layer, composed of a group III nitride semiconductor, and emits light having a wavelength of not less than 500 nm and not more than 570 nm by passing a current
Implementation Method 2
a confinement layer used for confining carriers within the light emitting layer
Data Source
AI summary
A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a multiple quantum well structure including first to fifth barrier layers and first to fourth well layers, and one well layer is sandwiched by two barrier layers. The thickness of the p-type cladding layer 161 is set at less than 3-times the thickness of each of the first to fourth well layer.