GaN Light-Emitting Element Uniform Micro-Cones
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Solution Overview
Problem
Existing methods for forming semiconductor light-emitting elements with GaN-based materials face challenges in creating uniform and regularly arranged micro-cones on the surface of n-type semiconductor layers, leading to issues with light extraction efficiency and reliability due to uneven etching and potential electrode material diffusion.
Innovation Solution
A method involving plasma treatment of the C-plane of GaN followed by wet-etching with an alkaline solution, using a mask layer with openings arranged at equal intervals, to form hexagonal pyramid protrusions that delay etching and ensure uniform micro-cone formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching is used to form recessed portions, then the etching process can be performed, but the shape and depth of the recessed portions cannot be controlled uniformly
Solution Approach 1:
The patent applies preliminary action by forming a mask layer with a specific pattern before etching. The mask layer pre-defines the shape and arrangement of recessed portions, allowing uniform control during the subsequent etching process. This preliminary patterning step ensures that all recessed portions have consistent shapes and depths, resolving the control issues with direct dry etching.
Solution Approach 2:
The mask layer serves as an intermediary between the etching process and the semiconductor layer. It mediates the etching action by selectively protecting certain areas while exposing others, thereby controlling the shape and depth of recessed portions. This intermediary element enables precise and uniform formation of etching control points without directly etching the semiconductor material in an uncontrolled manner.
2Illumination intensity
If recessed portions with many C-[-1010] crystal planes are formed, then light extraction efficiency is improved, but etching uniformity and control become difficult
Solution Approach 1:
The patent applies local quality by creating recessed portions with specific crystal plane orientations in localized areas of the semiconductor layer. By controlling the mask pattern and etching conditions, the recessed portions are formed with predominant C-[-1010] crystal planes that enhance light extraction, while maintaining uniformity across the entire surface. This localized control of crystal plane orientation achieves both high light extraction efficiency and etching uniformity.
3Device complexity
If wet etching is performed without preliminary treatment, then the process is simple, but the etching rate varies across different surface portions
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the semiconductor layer surface before wet etching. This preliminary plasma treatment modifies the surface properties uniformly, ensuring consistent etching rates across different surface portions during the subsequent wet etching process. The plasma treatment activates the surface and removes contaminants, creating uniform conditions for the wet etchant to act, thereby achieving both process simplicity and etching rate consistency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of highly reliable semiconductor light-emitting elements with improved light extraction efficiency by ensuring uniform micro-cone size and arrangement, preventing excessive etching and leakage current.
Implementation Method 1
performing a plasma treatment on a C -
Implementation Method 2
wet-etching the surface of the semiconductor structure layer to form a plurality of protrusions
Data Source
Figure 1
Figure 2A~2D
Figure 3A~3B
AI summary
Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.