GaN 2DEG Magnetic Sensing Matrix for Multi-Dimensional Field Measurement
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Solution Overview
Problem
Existing Hall magnetic sensors are limited to single-point measurements of static magnetic fields and cannot accurately measure dynamic magnetic field distributions in multi-dimensional spaces, leading to significant measurement errors due to positional and angular disturbances.
Innovation Solution
A high sensitivity magnetic sensing matrix chip with a two-dimensional electronic gas channel structure is developed, incorporating a magnetic sensing matrix, shift register, and back-end interface circuit. This chip enables real-time, static, and dynamic measurements of magnetic fields in multi-dimensional spaces by integrating multiple horizontal Hall elements with switching devices, allowing for error compensation and improved accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If single-point Hall magnetic sensor is used, then device structure is simple, but measurement precision deteriorates due to positional and angular disturbances
Solution Approach 1:
The invention divides a single sensing point into multiple sensing elements arranged in a matrix array. Each element contributes to the overall measurement, enabling spatial distribution of measurement points and reducing the impact of individual element errors through collective processing.
Solution Approach 2:
Multiple Hall magnetic sensing elements are combined into a matrix array structure with integrated readout circuits. The signals from all elements are processed together to achieve error compensation and improved measurement precision that exceeds the sum of individual elements.
2Measurement precision
If third-generation semiconductor materials (GaN) are used, then sensitivity and thermostability are improved, but manufacturing complexity increases
Solution Approach 1:
The invention utilizes the unique physical parameters of third-generation semiconductor materials, particularly the high electron mobility in GaN heterostructure two-dimensional electron gas channels, to achieve high sensitivity while managing manufacturing challenges through optimized device design.
Solution Approach 2:
The invention employs GaN heterostructure composite materials to form two-dimensional electron gas channels, combining multiple material layers with complementary properties to achieve high sensitivity, thermostability, and radiation resistance while addressing manufacturing considerations.
3Ease of manufacture
If traditional Si material is used, then ease of manufacture is improved, but sensitivity deteriorates due to low material mobility
Solution Approach 1:
The invention changes the fundamental material parameter from silicon's low-mobility band structure to GaN's high-mobility two-dimensional electron gas channel, achieving sensitivity improvement while managing the transition through optimized heterostructure design and fabrication processes.
4Measurement precision
If second-generation semiconductor materials (GaAs, InAs, InSb) are used, then sensitivity is improved through high mobility 2DEG channels, but reliability deteriorates in high temperature environments
Solution Approach 1:
The invention changes the band gap parameter from narrow (second-generation materials) to wide (third-generation GaN material), enabling operation in high temperature environments while maintaining high sensitivity through the heterostructure two-dimensional electron gas channel design.
Solution Approach 2:
The invention uses GaN heterostructure composite materials with wide band gap properties to achieve both high sensitivity and high temperature reliability, overcoming the limitations of second-generation materials that degrade above 200°C.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed chip achieves high sensitivity and accuracy in measuring magnetic fields, with a sensitivity of 16.5 mV/mT and linearity of 99.969%, significantly surpassing the performance of single third-generation semiconductor Hall sensors. It can operate stably in harsh environments, including high temperatures and high radiation conditions.
Implementation Method 1
Hall magnetic sensor made of the third generation semiconductor materials have good chemical stability and excellent reliability in high temperature environment due to the wide band gap. Especially taking gallium nitride (GaN) Hall magnetic sensor as an example, its band gap is 3.47 eV, ensuring the devices have high stability and reliability in high temperature environment, its heterojunction structure has naturally formed two-dimensional electron gas (2DEG) channels with high mobility, ensuring the devices have high sensitivity
Data Source
AI summary
A high-sensitivity two-dimensional electron gas channel structure magnetic sensing matrix chip includes a magnetic sensing matrix, a shift register, and a back-end interface circuit. The magnetic sensing matrix includes several matrix units including substrate, buffer layer, channel layer, and barrier layer. A two-dimensional electron gas channel material heterojunction structure includes buffer layer, channel layer, and barrier layer on the substrate, and the horizontal Hall element and switching device are above the channel layer. The beneficial effects include a high sensitivity magnetic sensing matrix chip with two-dimensional electronic gas channel structure can be used for real-time, static and dynamic measurement of multi-dimensional magnetic field distribution under high temperature, high pressure, high radiation and other harsh environments to carry out structural and circuit innovation and production.