Memory Cells with GaN Charge Trapping and Multi-Mechanism Transport

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Solution Overview

Problem

Current memory devices face limitations in programming speed, power consumption, and reliability, particularly in multi-level memory cells, which hinder their ability to achieve high data storage capacity and efficient operation across various memory levels.

Innovation Solution

The implementation of memory cells using a multi-mechanism charge transport mechanism, involving a semiconductor material, tunneling material, charge trapping material, and metal gate, which allows simultaneous charge transport through multiple channels, enabling fast and energy-efficient programming operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If single-channel programming method is used, then device complexity is reduced, but programming speed and performance deteriorate

Engineering Contradiction:

Improveprogramming speedVSAvoiddevice complexity

Core Design Contradiction:

SpeedVSDevice complexity

Solution Approach 1:

The programming pathway is segmented into multiple independent charge transport channels (first channel through fourth channel) that operate simultaneously. Each channel provides a distinct route for charge transport from the control gate to the charge trapping material, enabling parallel programming operations that increase overall programming speed while maintaining manageable device complexity through modular channel design

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Multiple charge transport channels are merged into a single integrated memory cell structure. The first and second channels transport charges through the first tunneling material, while the third and fourth channels transport charges through the second tunneling material, combining these parallel pathways into a unified device that achieves enhanced programming performance without proportionally increasing device complexity

Inventive Principle:

Principle #5Merging (Combining)

2Use of energy by moving object

If single-channel programming method is used, then manufacturing process is simplified, but power consumption increases

Engineering Contradiction:

Improvepower consumptionVSAvoidmanufacturing simplicity

Core Design Contradiction:

Use of energy by moving objectVSEase of manufacture

Solution Approach 1:

The programming function is segmented across multiple specialized channels, each optimized for specific charge transport mechanisms. This segmentation allows the device to distribute power consumption across parallel low-power pathways rather than relying on a single high-power channel, reducing overall power requirements while maintaining manufacturing feasibility through standardized channel modules

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different tunneling materials with varying dielectric properties are used in different channels to optimize charge transport efficiency. By adjusting material parameters such as dielectric constant and thickness in each channel, the device achieves efficient charge transport at lower voltage levels, thereby reducing power consumption while using conventional manufacturing processes

Inventive Principle:

Principle #35Parameter changes

3Quantity of substance

If multi-level memory cells are implemented, then data storage capacity increases, but programming reliability deteriorates

Engineering Contradiction:

Improvedata storage capacityVSAvoidprogramming reliability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The charge trapping material is functionally segmented into regions accessible through different charge transport channels, enabling independent programming and verification of multiple data states. This segmentation allows multi-level memory cells to store more bits per cell while maintaining programming reliability by providing redundant charge transport pathways that can be selectively used based on the desired data state

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the memory cell structure are assigned specialized functions: the first and second charge blocking materials provide localized charge confinement in different spatial regions, while the first and second tunneling materials offer locally optimized charge transport properties. This local quality differentiation enables reliable programming of multiple data states by creating distinct charge storage zones with controlled access pathways

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in memory devices with faster programming times, reduced power consumption, and higher performance compared to single-channel programming methods, while maintaining high reliability and endurance.

Implementation Method 1

tunneling material formed on the semiconductor material... charges are simultaneously transported to the charge trapping material through a plurality of different channels

Methodology Applied

Scientific EffectQuantum tunneling:

Data Source

PatentUS10998042B2Memory cells with tunneling materials including lanthanum oxide

Publication Date: 2021.05.04 MICRON TECHNOLOGY INC

AI summary

An example apparatus includes a semiconductor material, a tunneling material formed on the semiconductor material, a charge trapping material formed on the tunneling material, a charge blocking material formed on the charge trapping material, and a metal gate formed on the charge blocking material. The charge trapping material comprises gallium nitride (GaN), and the memory cell is programmed to the target state via the multi-mechanism charge transport such that charges are simultaneously transported to the charge trapping material through a plurality of different channels.