GaN Semiconductor Module Structure for Heat Dissipation and Shorter Wiring
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Solution Overview
Problem
Conventional semiconductor modules with GaN transistors face inadequate heat dissipation and high-frequency characteristics due to insufficient heat diffusion and large parasitic inductors from long wire connections in half bridge circuits.
Innovation Solution
The semiconductor module design includes an insulating heat dissipation board with conductor layers and metal plates bonded to semiconductor chips, using intermediate boards and metal films to shorten wire connections and reduce parasitic inductors, while maintaining efficient heat dissipation without increasing chip area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional wiring patterns with long wire connections are used, then electrical connection between semiconductor chips is achieved, but parasitic inductor increases and high frequency characteristics deteriorate
Solution Approach 1:
The patent transitions from planar wire connections to three-dimensional vertical connections through stacked intermediate boards. The drain electrode pads connect to upper surfaces of intermediate boards, which then connect to lower surfaces, creating a vertical path that significantly shortens wire length compared to horizontal routing across the substrate.
Solution Approach 2:
The patent introduces intermediate boards as mediator structures between semiconductor chips and substrate. These intermediate boards with conductor patterns serve as connection intermediaries, enabling shorter wire paths while maintaining electrical connectivity and reducing parasitic inductance.
2Temperature
If semiconductor chips are mounted on insulating substrate with wiring patterns, then electrical connection is established, but heat diffusion is insufficient and heat dissipation characteristics deteriorate
Solution Approach 1:
The patent employs a composite structure combining insulating substrate, metal plates, and intermediate boards with conductor patterns. This composite architecture enables simultaneous electrical connection and enhanced heat diffusion pathways, where metal components provide thermal conduction while insulating materials maintain electrical isolation.
Solution Approach 2:
The intermediate boards and metal plates serve dual functions: providing electrical connection pathways for drain electrodes while simultaneously acting as heat diffusion paths. This multi-functionality resolves the contradiction by enabling both electrical and thermal management through the same structural elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances heat dissipation and high-frequency characteristics by reducing parasitic inductors and wire lengths, enabling high-power, high-speed operation in power electronic applications.
Implementation Method 1
improvement of heat dissipation
Implementation Method 2
at least a first wiring pattern, a second wiring pattern, and a third wiring pattern which are conductor layers
Data Source
AI summary
The semiconductor module includes: a heat dissipation board including first to third wiring patterns; a first metal plate on the first wiring pattern, a second metal plate on the second wiring pattern, a first semiconductor chip and a first intermediate board which are on the first metal plate, a second semiconductor chip and a second intermediate board which are on the second metal plate. A first metal film on the first intermediate board is electrically connected to the first semiconductor chip and the second metal plate, and a second metal film on the second intermediate board is electrically connected to the second semiconductor chip and the third wiring pattern.