GaN Multilayer Structure on Amorphous Substrates for Low-Temperature Growth
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Solution Overview
Problem
The existing techniques for forming gallium nitride-based semiconductor layers on substrates like sapphire or quartz glass are costly and inefficient, particularly for large-area displays, due to high processing temperatures and the need for expensive substrates.
Innovation Solution
A multilayer structure is developed using an inexpensive amorphous substrate with an insulating surface, an orientation layer, and a semiconductor pattern containing gallium nitride. The orientation layer has distinct regions overlapping and not overlapping the semiconductor pattern, facilitating uniform crystalline growth and reducing processing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sapphire or quartz glass substrates are used for forming gallium nitride-based semiconductor layers, then high crystalline quality can be achieved, but the manufacturing cost increases significantly
Solution Approach 1:
The patent replaces expensive sapphire or quartz glass substrates with inexpensive amorphous substrates that can be discarded after use. The amorphous substrate serves only as a temporary support during the formation of the gallium nitride-based semiconductor layer, which is then transferred to the final device structure, leaving the amorphous substrate to be discarded. This eliminates the need for costly substrates while maintaining high crystalline quality in the semiconductor layer.
Solution Approach 2:
The patent introduces an amorphous substrate as an intermediary medium that facilitates the formation of high-quality gallium nitride-based semiconductor layers without requiring expensive sapphire or quartz glass substrates. The amorphous substrate acts as a temporary platform that enables precise control of crystal growth, after which the semiconductor layer is transferred to the final application, making the expensive substrate unnecessary.
2Manufacturing precision
If high processing temperatures are used to form gallium nitride-based semiconductor layers, then good crystalline structure is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the processing temperature parameters by forming the gallium nitride-based semiconductor layer at relatively low temperatures (below the melting point of the amorphous substrate) compared to traditional high-temperature processes. This is achieved by using the amorphous substrate as a temporary support that allows low-temperature deposition, followed by transfer of the semiconductor layer to the final structure, thereby avoiding the need for high-temperature processing while maintaining good crystalline structure.
3Reliability
If expensive substrates are used for LED formation, then high performance is achieved, but the area of display screens cannot be increased and manufacturing throughput is reduced
Solution Approach 1:
The patent uses inexpensive amorphous substrates that can be processed in large areas and then discarded after the semiconductor layer is transferred to the final device structure. This enables large-area manufacturing of high-performance LED devices without being constrained by the size or cost of traditional sapphire or quartz glass substrates, thereby increasing manufacturing throughput and display screen area.
Solution Approach 2:
The patent separates the substrate function into two distinct stages: first, the amorphous substrate serves as a temporary platform for forming the gallium nitride-based semiconductor layer with high crystalline quality; second, the semiconductor layer is transferred to the final device structure, leaving the amorphous substrate to be discarded. This segmentation allows the use of inexpensive, large-area substrates for manufacturing while maintaining high device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of highly crystalline gallium nitride semiconductor layers at lower temperatures, using less expensive substrates, thereby increasing the area of display screens and improving manufacturing throughput.
Implementation Method 1
a semiconductor layer containing gallium nitride is formed on the orientation layer
Data Source
AI summary
A multilayer structure includes an amorphous substrate having an insulating surface, an orientation layer on the amorphous substrate; and a semiconductor pattern containing gallium nitride on the orientation layer, the orientation layer has a first region overlapping the semiconductor pattern and a second region not overlapping the semiconductor pattern. A top surface of the second region is positioned lower than a top surface of the first region. The orientation layer has a groove in the second region that extends from a lower end of the semiconductor pattern to the first region, and in a plan view, the groove overlaps the semiconductor pattern.