GaN Nodule Removal via High-Power Dry Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
GaN-based semiconductor structures face challenges during fabrication due to the formation of nodules that are difficult to remove, leading to contamination and defects in subsequent processes, as traditional wet etching is ineffective and dry etching with insufficient power fails to completely remove these nodules.
Innovation Solution
A first dry etch step is performed with a bias power of 1500 W or higher to effectively remove the GaN-based nodules, using a fluorine-containing or chlorine-containing etchant, ensuring complete removal and preventing defects, thereby improving manufacturing yields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional wet etching is used to remove GaN-based nodules, then the process is simple and gentle, but the nodules cannot be effectively removed leading to contamination and defects
Solution Approach 1:
The patent changes the etching method from wet etching to dry etching, and further optimizes by adjusting the bias power parameter to 1500W or higher. This parameter change enables effective removal of GaN-based nodules while preventing contamination and defects in subsequent processes.
2Reliability
If dry etching with insufficient power is used, then energy consumption is reduced, but the nodules are not completely removed leading to manufacturing defects
Solution Approach 1:
The patent identifies bias power as a critical parameter and sets it to 1500W or higher to achieve complete nodule removal. This parameter optimization ensures both complete removal effectiveness and energy efficiency by avoiding excessive power consumption.
Solution Approach 2:
The patent applies excessive action by using bias power of 1500W or higher, which is sufficient to completely remove the nodules. This ensures complete removal effectiveness while the defined threshold prevents excessive energy consumption beyond what is necessary.
3Productivity
If high bias power dry etching is used to remove nodules, then removal effectiveness is improved, but energy consumption increases
Solution Approach 1:
The patent applies excessive action by using bias power of 1500W or higher, which is sufficient to completely remove the nodules. This ensures complete removal effectiveness while the defined threshold prevents excessive energy consumption beyond what is necessary.
Solution Approach 2:
The patent identifies bias power as a critical parameter and sets it to 1500W or higher to achieve complete nodule removal. This parameter optimization ensures both complete removal effectiveness and energy efficiency by avoiding excessive power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures the removal of GaN-based nodules, preventing contamination and defects, and enhancing the yield of semiconductor structures by applying sufficient energy during the dry etching process.
Implementation Method 1
performing a first dry etch step to remove the GaN-based nodules, wherein performing the first dry etch step comprises applying a first bias power that is equal to or higher than 1500 W
Implementation Method 2
performing a first dry etch step to remove the GaN-based nodules
Implementation Method 3
epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN-based semiconductor layer on the silicon layer and a plurality of GaN-based nodules on the edge region of the top surface of the substrate
Data Source
AI summary
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate; forming a silicon layer on the substrate, wherein an edge region of the top surface of the substrate is exposed from the silicon layer; epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN-based semiconductor layer on the silicon layer and a plurality of GaN-based nodules on the edge region of the top surface of the substrate; and performing a first dry etch step to remove the GaN-based nodules, wherein performing the first dry etch step includes applying a first bias power that is equal to or higher than 1500 W.