Integrated GaN NTC Resistor for On-Chip Temperature Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of temperature sensors in gallium nitride (GaN) technology is challenging due to the lack of available negative temperature coefficient (NTC) resistors that are temperature dependent, which are necessary for accurate temperature detection in GaN power devices.
Innovation Solution
A negative temperature coefficient (NTC) resistor is integrated into a GaN heterojunction structure, comprising a p-type doped gallium nitride (pGaN) layer, a gallium nitride heterojunction with a barrier and channel layer, and isolation regions, coupled with temperature independent current sources and high electron mobility transistors (HEMTs) to form a temperature detection circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If temperature sensors are integrated into GaN power devices, then temperature detection capability is improved, but device complexity increases because NTC resistors are not generally available in GaN technology
Solution Approach 1:
The patent merges the NTC resistor functionality directly into the GaN heterojunction structure by creating a pGaN layer integrated with the barrier layer and channel layer. This combination eliminates the need for separate NTC resistor components and achieves temperature detection capability within the GaN device itself, resolving the contradiction between measurement precision and device complexity
Solution Approach 2:
The patent uses composite material structure by combining p-type doped GaN layer with the GaN heterojunction (barrier layer and channel layer) to create an integrated NTC resistor. This composite approach enables temperature-dependent resistance behavior intrinsic to the GaN material system, achieving accurate temperature detection without adding external components
2Adaptability or versatility
If NTC resistor is integrated into GaN heterojunction structure, then temperature-dependent resistance is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating a specifically doped pGaN layer with particular doping concentrations and distributions within the heterojunction structure. This localized doping strategy achieves the desired NTC characteristics in specific regions while maintaining the overall device performance, balancing adaptability with manufacturable precision requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The NTC resistor provides temperature-dependent resistance for accurate temperature detection, enabling effective thermal management in GaN power devices by switching states in response to temperature thresholds, preventing thermal runaway.
Implementation Method 1
negative temperature coefficient (NTC) resistor including: a p-type doped gallium nitride (pGaN) layer; a gallium nitride (GaN) heterojunction structure under the pGaN layer
Data Source
AI summary
A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.