GaN Optocoupler Material Pairing for High-Temperature Isolation
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Solution Overview
Problem
Conventional optocouplers with gallium arsenide-based infrared light-emitting diodes and silicon- or germanium-based light-sensitive devices exhibit poor temperature resistance and low response frequency, limiting their application to high-temperature and high-frequency circuits.
Innovation Solution
An optocoupler utilizing a blue light-emitting diode and a green light-emitting diode as the light output and sensing chips, respectively, both made from gallium nitride with indium atoms, and an indium concentration gradient, along with a light-permeable layer and package layers for enhanced efficiency and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gallium arsenide-based infrared light-emitting diode and silicon-based light sensitive device are used, then the optocoupler can be manufactured with conventional materials, but the temperature resistance is poor and response frequency is low
Solution Approach 1:
The patent changes the material parameters from conventional gallium arsenide and silicon to gallium nitride-based materials with specific indium concentrations. This parameter change enables the optocoupler to operate at temperatures up to 150°C and achieve response frequencies of 10 MHz, resolving the temperature resistance and frequency limitations of conventional materials.
Solution Approach 2:
The patent employs composite material structures including InGaN/GaN heterostructures with graded indium concentrations. The light output chip uses InGaN with 10-20% indium concentration while the light sensing chip uses InGaN with 20-30% indium concentration, creating optimized composite material systems that simultaneously achieve high temperature resistance and high response frequency.
2Productivity
If conventional infrared light-emitting diode materials are used, then the manufacturing process is simple, but the response frequency is limited to 100 KHz or lower
Solution Approach 1:
The patent modifies the material composition parameters by incorporating indium into the gallium nitride structure with specific concentration ranges (10-30%). This parameter optimization reduces carrier transit time and increases response frequency from conventional 100 KHz to 10 MHz, while the multi-layer chip structure manages the increased device complexity.
Solution Approach 2:
The patent transitions from planar material structures to three-dimensional heterostructure designs with multiple layers of different indium concentrations. This dimensional complexity enables optimized light emission and detection pathways, achieving high response frequency while managing device complexity through structured layering.
3Reliability
If gallium nitride-based LEDs with indium atoms are used, then thermal stability and response frequency are enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise indium concentration ranges (10-20% for light output chip, 20-30% for light sensing chip) to optimize thermal stability and response frequency. These controlled parameter changes enable the device to maintain performance at temperatures up to 150°C while providing clear manufacturing targets for precision control.
Solution Approach 2:
The patent applies different indium concentrations to different functional regions: the light output chip uses 10-20% indium for optimal light emission, while the light sensing chip uses 20-30% indium for optimal light detection. This local quality differentiation achieves high thermal stability and response frequency while providing region-specific optimization that guides manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The optocoupler achieves stable performance from −55° C. to 150° C. and a high response frequency of up to 10 MHz, with improved thermal stability and current conversion efficiency.
Implementation Method 1
the light-sensing chip and the light output chip are a green light-emitting diode and a blue light-emitting diode, respectively
Implementation Method 2
the light output chip is used to generate a first beam having a first peak wavelength, the first peak wavelength ranges from 420 nm to 500 nm
Implementation Method 3
the light-sensing chip is used to generate a second beam having a second peak wavelength, the second peak wavelength ranges from 500 nm to 580 nm
Data Source
AI summary
An optocoupler includes a light output chip and a light-sensing chip. A light-receiving surface of the light-sensing chip is disposed to face a light output surface of the light output chip. The light-sensing chip and the light output chip are a blue light-emitting diode and a green light-emitting diode, respectively. Accordingly, the optocoupler has a stable output performance at a working temperature ranging from −55° C. to 150° C. and a high response frequency.