GaN Orientation Pattern on Amorphous Substrates for Low-Temperature Growth
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Solution Overview
Problem
The existing methods for forming gallium nitride semiconductor layers on substrates require high-temperature processes, which are costly and limit the scalability of display screens due to the need for expensive substrates like sapphire or quartz glass.
Innovation Solution
A semiconductor device is fabricated using an amorphous substrate with an insulating surface, featuring an orientation pattern with inclined side surfaces. A gallium nitride semiconductor layer is formed on this substrate using a sputtering method at temperatures below the substrate's strain point, allowing for high-throughput production without the need for expensive substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature processes are used to form gallium nitride semiconductor layers, then crystallinity is improved, but substrate cost increases and scalability is limited
Solution Approach 1:
The invention changes the temperature parameter from high-temperature (conventional) to low-temperature (below strain point) processing, enabling the use of inexpensive amorphous substrates while still achieving high crystallinity through the orientation pattern guidance mechanism
Solution Approach 2:
The orientation pattern acts as an intermediary structure between the amorphous substrate and the gallium nitride semiconductor layer, providing crystal orientation guidance that enables high crystallinity formation even at low temperatures on amorphous substrates
2Manufacturing precision
If expensive substrates like sapphire or quartz glass are used, then crystallinity is improved, but manufacturing cost increases
Solution Approach 1:
The invention replaces expensive, specialized substrates (sapphire, quartz glass) with inexpensive amorphous substrates that can be processed at lower temperatures, achieving the same crystallinity result through the orientation pattern mechanism
Solution Approach 2:
The invention changes the substrate material parameter from crystalline (sapphire/quartz) to amorphous, combined with low-temperature processing, to reduce manufacturing cost while maintaining crystallinity through orientation pattern guidance
3Ease of manufacture
If low-temperature processes are used, then manufacturing cost is reduced, but crystallinity may deteriorate
Solution Approach 1:
The orientation pattern serves as a mediator that compensates for the low-temperature processing, providing the necessary crystal orientation guidance to achieve high crystallinity despite the reduced thermal energy available for crystal growth
4Ease of manufacture
If amorphous substrates are used, then substrate cost is reduced, but the ability to form highly crystalline layers is limited
Solution Approach 1:
The orientation pattern acts as an intermediary that bridges the amorphous substrate and the crystalline semiconductor layer, providing the necessary orientation guidance to achieve high crystallinity on amorphous substrates that would otherwise be incapable of supporting such crystal growth
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of highly crystalline gallium nitride semiconductor layers on inexpensive amorphous substrates, enhancing the scalability and cost-effectiveness of semiconductor device manufacturing while maintaining high crystallinity and throughput.
Implementation Method 1
A gallium nitride semiconductor layer is formed on this substrate using a sputtering method at temperatures below the substrate's strain point
Implementation Method 2
forming an orientation pattern having an inclined side surface with respect to a bottom surface by wet etching the orientation layer
Data Source
AI summary
A semiconductor device includes an amorphous substrate with an insulating surface; an orientation pattern on the amorphous substrate; and a semiconductor pattern including gallium nitride on a top surface of the orientation pattern. The orientation pattern includes a first pattern portion with a side surface having a first angle relative to a bottom surface, and a second pattern portion with a side surface having a second angle smaller than the first angle relative to the bottom surface and located lower than the first pattern portion.