GaN Heterojunction P-Type Layer Etching Without Chamber Transfer
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Solution Overview
Problem
The semiconductor manufacturing process for AlGaN/GaN heterojunction structures faces contamination risks and low production efficiency due to multiple chamber transfers during etching of the P-type semiconductor layer.
Innovation Solution
A method involving in-situ etching with corrosive gases like H2 and/or NH3 at high temperatures, using a patterned mask layer to selectively remove the P-type semiconductor layer within a single reaction chamber, thereby avoiding chamber transfers and contamination, and activating P-type dopant ions to enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple chamber transfers are performed during etching of the P-type semiconductor layer, then the etching process can be completed with standard equipment, but the risk of contamination increases and production efficiency decreases
Solution Approach 1:
The patent combines multiple process steps (etching and chamber transfer operations) into a single reaction chamber. The etching process is performed in-situ without requiring transfer to a separate etching chamber, thereby eliminating contamination risks associated with chamber transfers while maintaining complete etching functionality.
Solution Approach 2:
The patent introduces a patterned mask layer as an intermediary component that enables selective etching within the same chamber. This mask layer allows the etching process to be performed selectively on exposed portions of the P-type semiconductor layer while protecting other regions, eliminating the need for complex chamber transfer sequences.
2Productivity
If multiple chamber transfers are performed during etching of the P-type semiconductor layer, then the etching process can be completed with standard equipment, but production efficiency decreases
Solution Approach 1:
The patent merges the etching process with the existing reaction chamber environment, eliminating the need for time-consuming transfers between chambers. The in-situ etching approach allows continuous processing without interruption, directly improving production efficiency by removing transfer time from the manufacturing cycle.
Solution Approach 2:
The patent enables continuous processing by performing etching in-situ without breaking the vacuum or transferring the substrate between chambers. The useful action of etching continues uninterrupted, maintaining process continuity and eliminating the time losses associated with chamber transfers and substrate handling.
3Reliability
If in-situ etching with corrosive gas is performed, then chamber transfers are eliminated and contamination risk is reduced, but selective removal of P-type layer requires precise mask patterning
Solution Approach 1:
The patent uses a patterned mask layer as an intermediary that enables selective etching. The mask layer is precisely patterned to define the regions where etching should occur, allowing the corrosive gas to selectively remove exposed portions of the P-type semiconductor layer while protecting underlying structures. This intermediary approach transfers the precision requirement to the mask fabrication process rather than the etching process itself.
Solution Approach 2:
The patent applies local quality by creating a patterned mask layer with different properties in different regions. The mask layer covers protected regions while leaving exposed regions vulnerable to etching. This spatial variation in mask presence enables selective removal of the P-type semiconductor layer only where needed, achieving precise control over the etching process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces contamination risks, improves production efficiency by eliminating chamber transfers, and ensures selective etching with minimal damage to the heterojunction structure, while activating P-type dopant ions to enhance semiconductor performance.
Implementation Method 1
removing an exposed portion of the P-type semiconductor layer by in-situ etching with a corrosive gas
Implementation Method 2
removing an exposed portion of the P-type semiconductor layer by in-situ etching with a corrosive gas, by using the patterned mask layer as a mask; activating P-type dopant ions in the P-type semiconductor layer
Implementation Method 3
forming a patterned mask layer on the P-type semiconductor layer, where the patterned mask layer at least covers a portion of the P-type semiconductor layer in the gate region
Data Source
AI summary
The present disclosure provides a method for manufacturing a semiconductor structure, the mothed including: providing a substrate, a heterojunction structure, and a P-type semiconductor layer, which are distributed from bottom to top; forming a patterned mask layer on the P-type semiconductor layer, the patterned mask layer covering at least a portion of the P-type semiconductor layer in a gate region; removing an exposed portion of the P-type semiconductor layer by in-situ etching with a corrosive gas, by using the patterned mask layer as a mask; and then activating the P-type dopant ions in the P-type semiconductor layer.