GaN Power Device Regrowth for Leakage Reduction
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Solution Overview
Problem
Nitride semiconductor-based power devices, particularly aluminum gallium nitride (AlGaN)/gallium nitride (GaN) heterostructure field effect transistors (HFETs), face challenges in achieving normally-OFF operation due to current leakage, leading to excessive power consumption.
Innovation Solution
A power device manufacturing method involving the formation of buffer layers, patterning of GaN layers, regrowth of n+-GaN and p+-GaN layers, and deposition of source and drain electrodes, with specific doping concentrations and temperature ranges to optimize electron mobility and reduce ohmic resistance, enabling normally-OFF operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If AlGaN/GaN heterostructure HFET is used to achieve high electron mobility, then electron mobility increases, but current leakage occurs and power consumption increases
Solution Approach 1:
The patent removes the AlGaN layer from the gate portion to eliminate the source of current leakage while preserving the GaN channel for high electron mobility operation, thereby achieving normally-OFF operation with reduced power consumption
Solution Approach 2:
The patent applies different doping concentrations to different regions: high doping (1.0×10^16/cm³ to 1.0×10^20/cm³) in source/drain regions for low resistance, and appropriate doping in the channel region for high electron mobility, optimizing both conductivity and mobility locally
2Quantity of substance
If implantation device is used to provide carriers to source and drain regions, then carrier concentration increases, but manufacturing complexity increases
Solution Approach 1:
The patent changes the doping concentration parameter to very high levels (1.0×10^16/cm³ to 1.0×10^20/cm³) in source and drain regions, which simplifies the manufacturing process by eliminating the need for complex implantation devices and multiple activation steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures reduced power consumption by minimizing current leakage and enhancing current density, while maintaining thin film crystal reliability and simplifying the manufacturing process.
Implementation Method 1
forming a buffer layer on a substrate, forming a p-gallium nitride (GaN) layer on the buffer layer
Implementation Method 2
a process, for example, a heat treatment and the like, may be performed to activate a carrier
Data Source
AI summary
A power device manufacturing method is provided. The power device manufacturing method may perform patterning of regions on which a source electrode and a drain electrode are to be formed, may regrow n+-gallium nitride (GaN) and p+-GaN in the patterned regions and thus, a thin film crystal may not be damaged. Also, a doping concentration of n+-GaN or p+-GaN may be adjusted, an ohmic resistance in the source electrode region and the drain electrode region may decrease, and a current density may increase. The power device manufacturing method may regrow n+-GaN and p+-GaN at a high temperature after an n-GaN layer and a p-GaN layer are patterned. Accordingly, a thin film crystal may not be damaged and thus, a reliability may be secured, and an annealing process may not be additionally performed and thus, a process may be simplified and a cost may be reduced.