Monolithic GaN Power Component With Vertical-Lateral Integration

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Solution Overview

Problem

The integration of vertical and lateral high-power transistor components using III nitride compound semiconductors is hindered by the lack of native nitride substrates, leading to inferior gallium nitride quality and high production costs, with existing methods like wafer bonding resulting in large, inefficient, and unreliable components.

Innovation Solution

A high-power component is produced by forming a lateral heterostructure monolithically on a subregion of a vertical transistor component using selective epitaxial overgrowth, eliminating the need for wafer bonding and enhancing component quality through reduced parasitic effects, while allowing for smaller form factors and improved energy efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If wafer bonding or hybrid integration methods are used to integrate vertical and lateral components, then both component types can be combined, but the effort and costs increase significantly and the components become large in dimension

Engineering Contradiction:

Improveintegration of vertical and lateral componentsVSAvoidproduction effort and costs

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges vertical and lateral component fabrication into a single monolithic structure by forming the lateral heterostructure directly on the vertical component during the same epitaxial growth process, eliminating the need for separate wafer bonding or hybrid integration steps

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The lateral heterostructure is formed in advance during the epitaxial growth process before final component fabrication, preparing the integrated structure in a single continuous process rather than through subsequent assembly operations

Inventive Principle:

Principle #10Preliminary action

2Adaptability or versatility

If wafer bonding or hybrid integration methods are used to integrate vertical and lateral components, then both component types can be combined, but the component dimensions become large and unsuitable for certain applications

Engineering Contradiction:

Improveintegration of vertical and lateral componentsVSAvoidcomponent dimensions

Core Design Contradiction:

Adaptability or versatilityVSVolume of moving object

Solution Approach 1:

Inventive Principle:

Principle #5Merging (Combining)

3Productivity

If silicon substrates are used for GaN-on-Si technology, then cost-effective large-area production is enabled, but the gallium nitride quality is markedly worse

Engineering Contradiction:

Improvelarge-area production capabilityVSAvoidgallium nitride quality

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by forming the lateral heterostructure with specific material composition and crystal orientation only in the regions where high-quality GaN is required, while allowing the bulk substrate to remain silicon-based for cost-effective production

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent uses composite material structures by combining silicon substrate with high-quality GaN layers and lateral heterostructures formed through selective epitaxial growth, achieving both cost-effectiveness and high material quality in the critical active regions

Inventive Principle:

Principle #40Composite materials

4Manufacturing precision

If selective epitaxial overgrowth is used to form lateral heterostructure monolithically on vertical component, then component quality improves with reduced parasitic effects, but the process complexity increases

Engineering Contradiction:

Improvecomponent quality and reduced parasitic effectsVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables high-power components with increased efficiency, power density, and reliability, suitable for energy-efficient applications like electromobility and wind power, by integrating vertical and lateral components monolithically, reducing parasitic influences and achieving higher current carrying capacities and lower sheet resistances.

Implementation Method 1

the lateral heterostructure of the second component is formed monolithically by means of selective epitaxial overgrowth on a subregion of a surface of the vertical component

Methodology Applied

Scientific EffectEpitaxy: Epitaxy

Data Source

PatentUS20240347629A1High-power component based on iii nitride compound semiconductors, intermediate product and process for production of a high-power component

Publication Date: 2024.10.17 FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV

AI summary

A high-power component (1) based on III nitride compound semiconductors, having at least one first, vertical transistor component (2) and at least one second component (10) having a lateral heterostructure (11). The lateral heterostructure (11) of the second component (10) is formed monolithically by selective epitaxial overgrowth on a subregion (4) of a surface (3) of the first, vertical component (2). The second component (10) has at least one transistor and optionally further active and/or passive components. An intermediate product (16) for the production of a high-power component (1) and to a process for the production of a high-power component (1) based on III nitride compound semiconductors are also provided.