GaN Power Device Protruding Structures for High Voltage

The patent transitions from conventional planar structures to a three-dimensional protruding structure configuration. The gallium nitride protruding structures extend vertically from the substrate surface, creating multiple conductive channels in the vertical dimension. This dimensional change enables high voltage withstand capability through increased breakdown voltage of the protruding structure configuration, while the lateral footprint remains compact, reducing the need for large device areas and associated process costs.

The device is segmented into multiple discrete gallium nitride protruding structures arranged in an array on the substrate. Each protruding structure acts as an independent conductive channel with its own Schottky barrier diode junction. This segmentation allows the total current capacity to be distributed across multiple parallel channels, achieving high voltage withstand capability through the collective behavior of segmented structures rather than requiring a single large-scale structure.

The patent resolves this contradiction by utilizing the vertical dimension through protruding structures that extend upward from the substrate. This vertical configuration enables the device to achieve high voltage withstand capability without proportionally increasing the horizontal device area. The protruding structures create extended conduction paths in the vertical direction, maintaining cost-effectiveness through smaller lateral footprints while achieving the required voltage ratings.

The patent applies local quality by creating regions of high electron mobility specifically at the protruding structure locations where the electron transport layer is positioned. The protruding structures concentrate the conductive channels in specific local regions with optimized material composition and structure, while other regions of the device can use standard configurations. This localized optimization achieves high performance in critical areas without requiring the entire device to be complex and expensive.