GaN RGB Light Sensing Unit for Integrated Imaging and Display
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Solution Overview
Problem
Current solid-state image sensors, particularly CMOS-based ones, face challenges in achieving high integration and miniaturization while maintaining effective light sensing and display capabilities.
Innovation Solution
A GaN-based light sensing unit comprising red, green, and blue light sensing sub-units with varying indium content in their layers, allowing for selective generation of electrical signals in response to different light wavelengths, integrated with a GaN-based image sensor and display apparatus for enhanced integration and miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If CMOS structure with color filters is used for full color imaging, then color sensing capability is improved, but integration degree and volume are increased
Solution Approach 1:
The patent merges the light sensing function and light emission function into a single GaN-based pixel unit. The same pixel structure serves both as a photosensor for capturing light and as an LED for displaying light, eliminating the need for separate sensor and display components. This merging approach directly increases integration degree while maintaining full color capability through the three-color sub-unit structure.
Solution Approach 2:
The GaN-based pixel unit is designed to perform multiple functions: it can sense light in three color channels (red, green, blue) and simultaneously emit light in these three color channels for display. This multi-functionality allows a single component to replace what would traditionally require separate imaging and display devices, thereby reducing overall system volume and improving integration.
2Adaptability or versatility
If traditional separate sensor and display devices are used, then light sensing and display functions are achieved, but device volume is increased
Solution Approach 1:
The patent combines two previously separate devices (image sensor and display device) into a single integrated GaN-based pixel unit. By merging the photosensing function and light emission function into one structure, the overall device volume is significantly reduced while maintaining both functionalities.
Solution Approach 2:
The patent implements a nested structure where the light emission components (LEDs) and light sensing components (photosensors) are integrated within the same pixel unit structure. The three-color sub-units are nested within each pixel, with shared electrical connections and integrated circuitry, allowing both sensing and display functions to coexist in a compact form factor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables increased integration and miniaturization of the image sensor and display apparatus, allowing for efficient light sensing and display functions through time-sharing of the metal interconnection structure, thereby improving the overall performance and compactness of the system.
Implementation Method 1
An image sensor converts a light image on a light sensing surface into electrical signals in a corresponding proportional relationship with the light image by using photoelectric conversion function of a photoelectric device
Data Source
AI summary
The present disclosure provides a light sensing unit, a gallium nitride (GaN)-based image sensor, and a display apparatus thereof. The light sensing unit includes: red, green, and blue light sensing sub-units, where materials of a light sensing layer of each of the light sensing sub-units are GaN-based materials containing indium(In). The materials of the light sensing layers may contain different contents of In, such that the light sensing sub-units are enabled to generate or not generate light sensing electrical signals according to different wave lengths of received light. During a GaN-based material growth process, the contents of In in different regions are controlled to prepare the light sensing sub-units at the same time to increase integration degrees of the light sensing unit, the GaN-based image sensor, and the display apparatus containing the light sensing unit to achieve miniaturization.