GaN Semiconductor Device With Segmented Subregions
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Solution Overview
Problem
Current semiconductor devices with Ga and N struggle to enhance operating speed due to limitations in reducing electron trapping and crystal defect density in specific regions.
Innovation Solution
A semiconductor device design featuring distinct subregions with varying concentrations of elements like Ar, B, P, and Fe, and insulating layers, which reduces electron trapping and improves electric resistance, thereby enhancing operating speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional semiconductor structures with uniform composition are used, then manufacturing is simpler, but electron trapping and crystal defect density remain high, limiting operating speed
Solution Approach 1:
The semiconductor device is divided into distinct subregions (first subregion, second subregion, third subregion) with different element concentrations. The first subregion contains high concentration of first element (Ar, B, P, or Fe), the second subregion contains Ga and N with low or no first element, and the third subregion contains the first element. This segmentation allows each region to serve specific functions: the first and third subregions reduce electron trapping, while the second subregion provides low-resistance conduction path, collectively improving operating speed.
Solution Approach 2:
Different subregions are designed with locally optimized compositions tailored to their specific functions. The first subregion near the electrode has high first element concentration to reduce electron trapping at the interface. The second subregion has low first element concentration to maintain low electric resistance for current flow. The third subregion has first element to continue the electron trapping reduction effect. This local quality optimization resolves the contradiction by allowing complex functionality without uniform structural complexity.
2Speed
If electron trapping is reduced through element addition, then operating speed improves, but crystal defect density and electric resistance may increase
Solution Approach 1:
The patent applies local quality by creating spatially varying element concentrations. The first subregion (near electrode) and third subregion contain the first element to reduce electron trapping, while the second subregion (conduction path) maintains low first element concentration to ensure low electric resistance. This localized optimization allows electron trapping reduction where needed without compromising overall electrical conductivity.
Solution Approach 2:
By segmenting the semiconductor into three subregions with different compositions, the patent isolates the electron trapping reduction function (first and third subregions) from the low-resistance conduction function (second subregion). This segmentation allows each function to be optimized independently, resolving the contradiction between reducing electron trapping and maintaining low electric resistance.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.