GaN Semiconductor Etching for Leakage Prevention
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Solution Overview
Problem
GaN-based semiconductor devices face issues with current leakage paths due to affected layers, which lower breakdown voltage during high-power operations.
Innovation Solution
The method involves etching the GaN-based semiconductor layer using a mixed solution of acid and an oxidizing agent or a gas containing Cl to remove affected layers, thereby preventing current leakage and maintaining high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional processes (organic processing, oxygen ashing, dry etching) are used to fabricate the field effect transistor, then the device can be manufactured with standard processes, but affected layers are generated on the GaN cap layer surface causing current leakage paths that lower breakdown voltage
Solution Approach 1:
The patent applies preliminary action by performing etching treatment with a mixed solution of acid and oxidizing agent (or Cl-containing gas) on the GaN cap layer surface before forming the electrode. This pre-treatment removes the affected layer that would otherwise cause current leakage paths, ensuring high breakdown voltage is maintained from the outset of device operation.
Solution Approach 2:
The patent converts the harmful affected layer (GaO) into a removable substance by using etching treatment with specific chemical solutions or gases. The affected layer, which initially causes current leakage, is transformed into etchable material that can be selectively removed, turning a manufacturing defect into a controllable process step.
2Reliability
If etching treatment is performed to remove affected layers, then current leakage paths are prevented and breakdown voltage is maintained, but additional process steps are required increasing manufacturing complexity
Solution Approach 1:
The patent changes the chemical parameters of the etching process by using a mixed solution of acid and oxidizing agent (or Cl-containing gas) instead of conventional etchants. This parameter change enables selective removal of the affected layer while minimizing damage to the underlying GaN structure, achieving high breakdown voltage with a controlled, single-step process.
Solution Approach 2:
The patent introduces an intermediary substance (mixed solution of acid and oxidizing agent, or Cl-containing gas) that mediates between the affected layer and the electrode formation process. This intermediary selectively reacts with and removes the affected layer, bridging the gap between conventional manufacturing processes and the requirement for high breakdown voltage.
3Ease of manufacture
If the affected layer is not removed, then the manufacturing process remains simple, but current leakage paths form between gate and drain reducing device performance
Solution Approach 1:
The patent converts the harmful affected layer (GaO) into a removable substance by using etching treatment with specific chemical solutions or gases. The affected layer, which initially causes current leakage, is transformed into etchable material that can be selectively removed, turning a manufacturing defect into a controllable process step.
Solution Approach 2:
The patent extracts the harmful affected layer from the GaN cap layer surface through etching treatment with a mixed solution of acid and oxidizing agent (or Cl-containing gas). This extraction removes the source of current leakage paths, allowing the electrode to form a clean interface with the GaN layer and maintain high breakdown voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes affected layers, ensuring stable ohmic contact and preventing breakdown voltage reduction in GaN-based semiconductor devices.
Implementation Method 1
etching the surface of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent
Implementation Method 2
etching the surface of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent
Implementation Method 3
dry etching the surface of the GaN-based semiconductor layer by a gas that includes Cl
Implementation Method 4
dry etching the surface of the GaN-based semiconductor layer by a gas that includes Cl
Data Source
AI summary
A fabrication method of a semiconductor device includes steps of performing any one of O2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer, etching the surface of the GaN-based semiconductor layer in a mixed solution of acid and an oxidizing agent, and forming an electrode on the surface of the GaN-based semiconductor layer.