GaN Semiconductor Device Multi-Row Active Region Heat Dissipation
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Solution Overview
Problem
Gallium nitride semiconductor devices face heat dissipation challenges due to high heat density, leading to non-uniform temperature distribution, which affects stability and reliability, and increasing the device width for better heat dissipation complicates subsequent processes and reduces performance.
Innovation Solution
The semiconductor device is designed with a plurality of active region units that do not completely overlap in the length direction, increasing the passive region area for improved heat dissipation, reducing the width-length ratio, and facilitating uniform temperature distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the device width is increased to increase the heat dissipation area, then the heat dissipation is improved, but the width-length ratio increases which results in increased difficulty in cutting and packaging, decreased yield and reduced performance
Solution Approach 1:
The patent transitions from a conventional single-row arrangement to a multi-row arrangement of active region units. This dimensional change allows heat dissipation area to be increased by adding rows rather than extending the width of a single row, thereby improving heat dissipation while maintaining a reasonable width-length ratio and avoiding the associated manufacturing and performance issues.
Solution Approach 2:
The active region is divided into multiple active region units arranged in multiple rows. This segmentation allows the heat dissipation function to be distributed across multiple rows, increasing the effective heat dissipation area without requiring a proportional increase in device width, thus resolving the contradiction between heat dissipation and device dimensions.
2Power
If the active region occupies the most area of the device, then the power density is high, but it is difficult to transfer heat generated in the central region through lateral paths, resulting in nonuniform temperature distribution
Solution Approach 1:
The active region is segmented into multiple active region units arranged in multiple rows with passive regions between them. This segmentation creates lateral heat transfer paths through the passive regions, allowing heat generated in central regions to be effectively transferred to edge regions, thereby achieving uniform temperature distribution while maintaining high power density.
Solution Approach 2:
The passive regions act as intermediary zones between adjacent active region units. These passive regions facilitate lateral heat transfer from high-temperature central regions to lower-temperature edge regions, serving as thermal conduits that enable uniform temperature distribution across the device while preserving the high power density of the active regions.
Data Source
AI summary
A semiconductor device comprises an active region and a passive region located outside the active region. The active region comprises a plurality of active region units. At least one pair of adjacent active region units do not completely overlap in a length direction of the semiconductor device.