GaN Semiconductor Withstand Voltage via Insulating Layer and Notch
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Solution Overview
Problem
Gallium nitride compound semiconductor elements with conductive base plates face instability in electric properties due to potential fluctuations and inadequate withstand voltage, primarily due to leakage currents and electric discharge issues when using silicon or other conductive base plates.
Innovation Solution
A compound semiconductor element design featuring a conductive base plate with an insulating layer and a conductive film, where one electrode is electrically connected to the base plate to stabilize the electric potential, and a notch in the compound semiconductor region extends to the insulating layer to prevent leakage currents and electric discharge, with an insulating protective layer covering the side surfaces to enhance withstand voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conductive base plate (such as silicon) is used to reduce cost and improve manufacturability, then manufacturing cost and ease of processing are improved, but electric potential fluctuation occurs causing unstable electric properties
Solution Approach 1:
An insulating layer is introduced as an intermediary between the conductive base plate and the compound semiconductor region. This insulating layer electrically isolates the compound semiconductor region from the base plate, preventing potential fluctuations from affecting device performance while still allowing the use of cost-effective conductive base plates like silicon.
2Reliability
If the compound semiconductor region is thickened to reduce leakage current and improve withstand voltage, then withstand voltage is improved, but epitaxial growth becomes very difficult
Solution Approach 1:
The insulating layer serves as a mediator that blocks leakage current paths between the compound semiconductor region and the base plate. This allows the compound semiconductor region to maintain a practical thickness that is achievable through epitaxial growth, while the insulating layer provides the additional electrical isolation needed for high withstand voltage performance.
3Reliability
If an insulating film is interposed between the base plate and compound semiconductor region to reduce leakage current, then leakage current is reduced, but electric discharge may occur between side surfaces
Solution Approach 1:
The solution extends the electrical isolation from the vertical dimension to include the lateral dimension. By forming the insulating layer to extend laterally and covering the side surfaces of the compound semiconductor region, the patent blocks leakage current and prevents electric discharge along the side surfaces, addressing the three-dimensional leakage paths.
4Reliability
If a notch is formed to extend to the insulating layer to prevent leakage current, then leakage current is reduced, but device structure becomes more complex
Solution Approach 1:
The compound semiconductor region is segmented by forming a notch that divides it into separate regions. This segmentation creates a physical barrier that interrupts leakage current paths and allows the insulating layer to effectively isolate electrical potentials, reducing leakage current while maintaining a relatively simple overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves stable electric properties and high withstand voltage by preventing electric discharge and leakage currents, while allowing for cost-effective manufacturing and improved crystallization of the compound semiconductor region on silicon-on-insulator base plates.
Implementation Method 1
formed between compound semiconductor region (2) and substrate (5) is insulating layer (6) for blocking a leakage current which may flow longitudinally
Implementation Method 2
electrically connected to base plate (1) to fix electric potential of base plate (1) at electric potential of electrode (3)
Data Source
AI summary
A compound semiconductor element is provided which electrically connects an electrode 3 formed on one main surface 2a of a compound semiconductor region 2 with a substrate 5 to fix an electric potential of substrate 5 at an electric potential of electrode 3, thereby preventing fluctuation in electric potential of substrate 5 under the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor region 2 and substrate 5 is an insulating layer 6 for blocking a leakage current which may flow longitudinally between one main surface 2a of compound semiconductor region 2 and substrate 5 so that sufficiently high withstand voltage property can be given between compound semiconductor region 2 and substrate 5. In addition, formed in compound semiconductor region 2 is a notch 14 which extends in the thickness direction from main surface 2a of compound semiconductor region 2 and reaches at least insulating layer 6, and an insulating protective layer 15 covers a side surface of a conductive film 7 exposed to the notch 14 to prevent occurrence of electric discharge between conductive film 7 and substrate 5 for stable and high withstand voltage.