GaN Sensor Heater Integration for Power and Size Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Manufacturing a gallium nitride-based sensor with a heater structure is challenging due to the high epitaxy growth temperature of GaN-based sensors, which results in large size and high power consumption, as well as difficulties in reducing heat capacity and reaction time.
Innovation Solution
A method involving growing an n-type or p-type GaN layer on a substrate, forming a barrier layer, and patterning to create an electrode, with the n-type or p-type GaN layer functioning as a heater, allowing for direct heat transfer to the sensing material and adjusting threshold voltage, while using a barrier layer to prevent current flow and embedding the heater structure within the sensor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a heater structure is formed on the sensor structure after epitaxial growth, then the sensor can be heated to improve sensitivity and reduce restoration time, but the distance from the heater to the sensing material is long causing high power consumption and large sensor area
Solution Approach 1:
The patent merges the heater structure with the epitaxial thin film by forming the heater within the same epitaxial growth process that creates the sensor structure. This integration eliminates the need for a separate heater layer, reducing the distance between the heating element and the sensing material, and thereby reducing power consumption while maintaining heating effectiveness.
Solution Approach 2:
The epitaxial thin film serves multiple functions: it acts as both the sensor structure and the heater structure. By forming the heater within the epitaxial layers, the same material system performs both sensing and heating functions, eliminating the need for separate heater materials and reducing overall device complexity.
2Reliability
If a heater structure is formed on the sensor structure after epitaxial growth, then the sensor can be heated to improve sensitivity and reduce restoration time, but the sensor area has to include the heater region undesirably enlarging the size of the sensor
Solution Approach 1:
The heater structure is merged with the sensor structure by forming both within the same epitaxial thin film. This integration allows the heater to be positioned directly within or adjacent to the sensing region, eliminating the need for separate heater area and reducing the overall sensor footprint.
3Use of energy by stationary object
If the substrate heat capacity is reduced by removing portions of the substrate to enable heater manufacturing, then power consumption can be reduced, but the process is difficult and complex
Solution Approach 1:
The heater structure is formed during the epitaxial growth process itself, before the sensor structure is completed. This preliminary formation of the heater within the epitaxial layers eliminates the need for subsequent substrate modification processes, simplifying manufacturing while achieving low power consumption.
4Ease of manufacture
If no epitaxial thin film is grown to allow heater formation first, then a heater can be manufactured on a membrane structure, but GaN-based epitaxial growth at 1000°C or more cannot be performed after heater formation
Solution Approach 1:
The patent combines the heater formation process with the epitaxial growth process by forming the heater structure within the epitaxial thin film during the same high-temperature growth process. This eliminates the sequence conflict and allows both GaN epitaxial growth and heater formation to occur together at 1000°C or higher.
Solution Approach 2:
The patent changes the formation temperature parameter by forming the heater structure at high temperature (1000°C or more) during epitaxial growth, rather than at low temperature before growth. This temperature parameter change enables the heater to be formed in a GaN-compatible manner, preserving epitaxial growth capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption, enhances sensitivity, and decreases restoration time by embedding the heater directly below the sensor structure, facilitating rapid temperature control of the sensing material.
Implementation Method 1
the n-type or p-type GaN layer functioning as a heater, allowing for direct heat transfer to the sensing material
Implementation Method 2
an AlGaN thin film is grown on GaN, is able to form a 2-DEG (2-Dimensional Electron Gas) layer having very fast electron mobility at the interface of AlGaN and GaN through spontaneous polarization and piezoelectric effects
Implementation Method 3
an AlGaN thin film is grown on GaN, is able to form a 2-DEG (2-Dimensional Electron Gas) layer having very fast electron mobility at the interface of AlGaN and GaN through spontaneous polarization and piezoelectric effects
Data Source
Figure 1a
Figure 1b
Figure 1c
AI summary
A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.