GaN-Si Co-Packaged Driver Circuit for High-Voltage Signal Level Shifting
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Solution Overview
Problem
The high cost of high-voltage BCD components used in half-bridge power management structures due to their complex manufacturing processes, which makes them expensive and difficult to replace with simpler technology while maintaining high-side driver functionality.
Innovation Solution
A chip design incorporating a low-voltage silicon-based driver die connected to a high-voltage gallium nitride die, where the gallium nitride circuit shares the input voltage with the silicon-based circuit, allowing the silicon-based circuit to remain low-voltage and reducing manufacturing complexity and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high-voltage BCD component is used for the high-side driver, then high-voltage resistance is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The driver is divided into two separate dies: a low-voltage silicon-based driver die and a high-voltage gallium nitride die. The low-voltage die handles signal processing while the high-voltage die handles power switching, allowing each to be optimized for its specific voltage requirement and manufactured using appropriate processes
Solution Approach 2:
A voltage level shifter circuit is introduced as an intermediary component between the low-voltage driver die and the high-voltage gallium nitride die. This level shifter translates low-voltage control signals into high-voltage gate drive signals, enabling the low-voltage die to control the high-voltage switch without direct exposure to high voltage
2Reliability
If a high-voltage BCD component is used for the high-side driver, then high-voltage resistance is achieved, but cost increases
Solution Approach 1:
The driver is divided into two separate dies: a low-voltage silicon-based driver die and a high-voltage gallium nitride die. The low-voltage die handles signal processing while the high-voltage die handles power switching, allowing each to be optimized for its specific voltage requirement and manufactured using appropriate processes
Solution Approach 2:
The system transitions from a single high-voltage BCD component to a multi-die architecture with different voltage parameters. The low-voltage die operates at standard low voltages while the high-voltage die operates at the required high voltage, allowing cost optimization by using simpler, cheaper manufacturing for the majority of the driver circuitry
3Ease of manufacture
If a low-voltage silicon-based driver die is used, then manufacturing cost is reduced, but the driver cannot withstand high input voltage
Solution Approach 1:
The driver is divided into two separate dies: a low-voltage silicon-based driver die and a high-voltage gallium nitride die. The low-voltage die handles signal processing while the high-voltage die handles power switching, allowing each to be optimized for its specific voltage requirement and manufactured using appropriate processes
Solution Approach 2:
A voltage level shifter circuit is introduced as an intermediary component between the low-voltage driver die and the high-voltage gallium nitride die. This level shifter translates low-voltage control signals into high-voltage gate drive signals, enabling the low-voltage die to control the high-voltage switch without direct exposure to high voltage
4Ease of manufacture
If a low-voltage silicon-based driver die is used, then manufacturing cost is reduced, but pulse signal transfer to high-side driver cannot be achieved
Solution Approach 1:
A voltage level shifter circuit is introduced as an intermediary component between the low-voltage driver die and the high-voltage gallium nitride die. This level shifter translates low-voltage control signals into high-voltage gate drive signals, enabling the low-voltage die to control the high-voltage switch without direct exposure to high voltage
Solution Approach 2:
The patent replaces the direct electrical connection mechanism with a signal conversion mechanism. Instead of requiring the low-voltage die to directly withstand and process high-voltage signals, it uses controlled electrical fields and voltage conversion to achieve signal transfer, enabling cost-effective manufacturing while maintaining operational capability
Data Source
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AI summary
This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. The first silicon-based driver die is connected to two output terminals of a controller, a first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. The first silicon-based circuit receives a pulse signal HI output by the controller and transfers the HI to the gallium nitride circuit. The gallium nitride circuit shares an input voltage VB of the second silicon-based circuit and transfers the HI to the second silicon-based circuit. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.