GaN Power Device Epitaxy on Silicon for High Breakdown Voltage
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Solution Overview
Problem
Existing power electronic devices based on gallium nitride face manufacturing challenges, including costly and complex processes for forming conduction electrodes and achieving high breakdown voltages.
Innovation Solution
A method involving epitaxial growth of nitrided transition metal and III-V material layers on a silicon semiconductor substrate, with optional intermediate layers and electrodes, to create a power electronic device with improved structural integrity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form conduction electrodes and achieve high breakdown voltages in GaN-based power devices, then the devices can achieve high breakdown voltage, but the manufacturing process becomes costly and complex
Solution Approach 1:
The patent introduces a nitrided transition metal layer as an intermediary between the silicon substrate and the III-V material layer. This intermediate layer mediates the interface between dissimilar materials, enabling high breakdown voltage operation while simplifying the manufacturing process by eliminating complex electrode formation steps
Solution Approach 2:
The patent changes the chemical and physical parameters of the interface by nitriding the transition metal layer. This parameter change (nitridation) modifies the interface properties to achieve both high breakdown voltage and process simplification simultaneously
2Reliability
If conventional methods are used to form conduction electrodes and achieve high breakdown voltages in GaN-based power devices, then the devices can achieve high breakdown voltage, but the manufacturing cost increases
Solution Approach 1:
The nitrided transition metal layer serves as a cost-effective intermediary that eliminates the need for expensive complex electrode formation processes while maintaining high breakdown voltage performance
Solution Approach 2:
The patent uses a relatively simple and inexpensive nitrided transition metal layer instead of complex expensive electrode structures, reducing manufacturing cost while achieving the required electrical performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, reduces costs, and enables the production of high-breakdown-voltage power electronic devices with enhanced performance and reliability.
Implementation Method 1
forming, by epitaxially growing, from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate
Implementation Method 2
forming, by epitaxially growing, on the first layer on the front face side of the substrate, at least one second layer of a III-V material
Implementation Method 3
forming, by pulsed laser ablation from a face of the first layer opposite the front face of the substrate, an epitaxial third layer of a material selected from aluminum nitride, gallium nitride, indium nitride
Data Source
AI summary
A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.