GaN-on-Silicon Power Device Interface Tuning for Leakage Control
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Solution Overview
Problem
GaN-based power devices face limitations in breakdown voltage due to vertical leakage current caused by a high-concentration conductive layer at the interface between the GaN thin film and silicon substrate, which is exacerbated by the difference in lattice constant and thermal expansion coefficients, and existing methods to address this either degrade device characteristics or require complex processes.
Innovation Solution
Irradiating a particle beam onto the silicon substrate of a GaN-based power device to intensively distribute particle ions at the interface between the AlN thin film and the silicon substrate, increasing resistance and eliminating the cause of leakage current without damaging the thin film, thereby improving breakdown voltage characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a high-concentration conductive layer is formed at the interface between the AlN thin film and silicon substrate, then the manufacturing process is simplified, but vertical leakage current increases and breakdown voltage deteriorates
Solution Approach 1:
The patent applies parameter changes by irradiating a particle beam onto the silicon substrate to modify the electrical properties of the conductive layer at the AlN/Si interface. The particle beam irradiation changes the resistance characteristics of the conductive layer, transforming it from a high-concentration conductive state to a higher resistance state, thereby reducing vertical leakage current and improving breakdown voltage while maintaining the simplified manufacturing process of using silicon substrates
Solution Approach 2:
The patent replaces mechanical or chemical methods (such as substrate removal or high-resistance substrate replacement) with a physical field method (particle beam irradiation) to address the leakage current problem. This substitution allows modification of the conductive layer properties without changing the fundamental structure or requiring additional complex processing steps
2Reliability
If the space between gate and drain is increased to reduce leakage current, then breakdown voltage improves, but channel resistance increases and operating characteristics degrade
Solution Approach 1:
The patent changes the resistance parameter of the conductive layer at the AlN/Si interface through particle beam irradiation, achieving a state where the conductive layer has higher resistance. This allows reduction of vertical leakage current without increasing the gate-drain spacing, thereby maintaining low channel resistance and good operating characteristics while improving breakdown voltage
3Reliability
If high-resistance silicon substrate is used to reduce vertical leakage current, then breakdown voltage improves, but cost increases and charge trapping effect degrades device characteristics
Solution Approach 1:
The patent applies local quality by selectively irradiating the particle beam onto the silicon substrate at the AlN/Si interface region, creating a localized modification of the conductive layer properties. This localized treatment achieves high resistance at the critical interface without requiring the entire substrate to be high-resistance, thereby avoiding the cost increase and charge trapping effects associated with bulk high-resistance substrates
4Reliability
If the silicon substrate is removed after device manufacturing to reduce leakage current, then breakdown voltage improves, but process complexity increases
Solution Approach 1:
The patent performs preliminary action by irradiating the particle beam onto the silicon substrate during or after the device manufacturing process to modify the conductive layer properties. This preliminary modification of the substrate properties eliminates the need for subsequent substrate removal, thereby improving breakdown voltage without adding process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively minimizes thin film damage and enhances breakdown voltage by increasing resistance at the interface, allowing for improved power device performance without the need for additional complex processes like substrate removal, and can be applied to large-scale production.
Implementation Method 1
irradiating a particle beam onto a silicon substrate of a GaN-based power device including a silicon substrate
Implementation Method 2
as the particle ions are intensively distributed at an interface between the AlN thin film and silicon substrate of the GaN-based power device by the incident particle beam
Data Source
AI summary
The present invention relates to: a method for manufacturing a GaN-based power device, the method comprising a step of irradiating particle beams onto a silicon substrate of a GaN-based power device, in which the silicon substrate is included; and a GaN-based power device manufactured by the method for manufacturing a GaN-based power device.