GaN Substrate Epitaxial Growth and Vacuum Suction Stability
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Solution Overview
Problem
GaN substrates tend to crack during vacuum suction due to warpage caused by epitaxial growth stress, leading to unstable transcription processes and diffused reflection issues.
Innovation Solution
Epitaxial growth of a semiconductor layer on the Ga surface of a GaN substrate followed by removal of the epitaxial deposit before vacuum suction to prevent cracking and ensure stable processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If epitaxial growth is performed on a GaN substrate, then a semiconductor layer can be formed, but the substrate warpage increases causing cracking during vacuum suction
Solution Approach 1:
The patent applies preliminary action by performing transcription processes (forming ridges and patterning electrodes) before the epitaxial growth step. This sequence ensures that the GaN substrate maintains its structural integrity during vacuum suction operations, as the transcription processes create features that prevent substrate cracking even after subsequent epitaxial growth and vacuum suction steps
2Ease of operation
If vacuum suction is applied to the N surface of the GaN substrate, then the wafer can be transferred, but the substrate cracks due to warpage
Solution Approach 1:
The patent performs transcription processes before epitaxial growth to create structural features on the substrate that prevent cracking during vacuum suction. The ridge structures and patterned electrodes formed in advance provide mechanical support that maintains substrate stability during wafer transfer operations
Solution Approach 2:
The patent applies preliminary anti-action by creating transcription features that counteract the warpage-induced stress before vacuum suction is applied. These pre-formed structures serve as stress distribution elements that prevent the concentration of forces that would otherwise cause cracking during substrate handling
3Quantity of substance
If an epitaxial deposit is present on the N surface, then material gas accumulates, but diffused reflection occurs making transcription unstable
Solution Approach 1:
The patent applies the extraction principle by removing the epitaxial deposit from the N surface of the GaN substrate before performing transcription processes. This removal eliminates the source of diffused reflection, ensuring that subsequent transcription operations achieve stable and precise results without interference from scattered light
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents substrate cracking and stabilizes transcription processes by removing the epitaxial deposit before vacuum suction, enhancing manufacturing reliability.
Implementation Method 1
the N surface of the GaN substrate is subjected to vacuum suction with a vacuum suction apparatus
Implementation Method 2
a semiconductor layer formed of a GaN-based material is epitaxially grown on the Ga surface of a GaN substrate
Implementation Method 3
when the semiconductor layer is epitaxially grown, the material gas of the semiconductor layer goes around the N surface of the GaN substrate
Data Source
AI summary
A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.