GaN Semiconductor Substrate for Water Vapor Collection

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Solution Overview

Problem

Conventional water collection devices require large-scale equipment to collect water molecules, making them inefficient for areas with limited resources, and they often consume excessive energy and resources for water purification.

Innovation Solution

A gallium nitride-containing semiconductor substrate with a crystal face inclined from 0.05° to 15° and featuring an irregular portion, which is superhydrophilic, allowing for efficient collection of water vapor from the air without the need for large-scale devices or excessive energy, converting it into liquid water.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional water collection devices are used, then water molecules can be collected, but large-scale equipment is required and energy consumption is excessive

Engineering Contradiction:
Improvewater collection efficiencyVSAvoidequipment scale
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent changes the surface energy parameter of the semiconductor substrate by controlling crystal orientation (inclined at 0.05° to 15° from c-plane) and creating irregular portions, transforming the surface from hydrophobic to superhydrophilic. This parameter change enables efficient water vapor collection without requiring large-scale equipment, as the modified surface properties enhance water molecule attraction and condensation at the micro-scale.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The irregular portions created on the semiconductor substrate surface function as micro-scale porous structures that increase surface area and provide nucleation sites for water vapor condensation. These micro-irregularities enable efficient water collection by increasing the effective surface area for water molecule attachment while maintaining a compact device footprint.

Inventive Principle:
Principle #31Porous materials

2Reliability

If conventional water purification techniques are used, then water can be purified, but excessive energy and resources are consumed

Engineering Contradiction:
Improvewater purification qualityVSAvoidenergy consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The semiconductor substrate with modified surface properties performs water vapor collection and initial purification through its inherent superhydrophilic characteristics, without requiring external energy input for pumping or heating. The surface automatically attracts and condenses water vapor from the air, and the condensed water can be collected directly, eliminating the need for energy-intensive conventional purification processes.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device effectively collects water vapor, forming water droplets on the substrate, providing a reliable water source with reduced energy consumption and equipment size, suitable for regions with limited resources.

Implementation Method 1

the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on a surface of the irregular portion is 10° or less

Methodology Applied
Scientific EffectSuperhydrophilicity: Superhydrophilicity

Data Source

PatentUS10526727B2Device including semiconductor substrate containing gallium nitride and method for producing the same
Publication Date: 2020.01.07 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
  • US10526727B2 patent drawing
  • US10526727B2 patent drawing
  • US10526727B2 patent drawing

AI summary

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.