GaN Switching Device With Resistance Layer For Electric Field Distribution
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Solution Overview
Problem
Existing switching devices with GaN and AlGaN layers suffer from electric field concentration near the gate electrode, leading to reduced voltage resistance due to the short distance between the field plate and drain electrode, resulting in inadequate high voltage resistance.
Innovation Solution
The switching device incorporates an electron transport layer, an electron supply layer, a source electrode, a drain electrode, and a first gate electrode, with a resistance layer having higher resistivity than the gate and drain electrodes, positioned between them to distribute the electric field uniformly, thereby reducing local electric field concentration and enhancing voltage resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the distance between field plate and drain electrode is reduced, then device integration is improved, but voltage resistance deteriorates due to electric field concentration in the semiconductor layer
Solution Approach 1:
The resistance layer acts as a mediator between the field plate and drain electrode, allowing them to be positioned closer for better integration while preventing direct electric field concentration in the semiconductor layer. The intermediary layer distributes the electric field, enabling reduced spacing without sacrificing voltage resistance.
Solution Approach 2:
By changing the resistivity parameter of the intermediate layer to be higher than both the gate and drain electrodes, the invention enables the structure to maintain high voltage resistance even when the physical distance between field plate and drain electrode is reduced, thus improving integration without compromising reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses local electric field concentration and achieves high voltage resistance by ensuring that the electric field is distributed uniformly between the gate and drain electrodes, even under high voltage conditions.
Implementation Method 1
The electron supply layer is provided on the electron transport layer and in contact with the electron transport layer by heterojunction
Implementation Method 2
a two-dimensional electron gas (hereafter referred to as 2DEG) is generated at an interface between the GaN layer and the AlGaN layer
Implementation Method 3
a resistance layer having higher resistivity than the gate and drain electrodes, positioned between them to distribute the electric field uniformly, thereby reducing local electric field concentration
Data Source
AI summary
The switching device includes an electron transport layer; an electron supply layer provided on the electron transport layer and being in contact with the electron transport layer by heterojunction; a source electrode being in contact with the electron supply layer; a drain electrode being in contact with the electron supply layer at a position spaced from the source electrode; and a first gate electrode provided above the electron supply layer, and provided between the source electrode and the drain electrode when viewed in a plan view from above. The first gate electrode is electrically connected above the electron supply layer to the drain electrode. An on-resistance of the switching device is lower than an electric resistance between the first gate electrode and the drain electrode.