GaN Switching Device Hole Injection Reduces ON Resistance
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Solution Overview
Problem
Conventional switching devices with nitride semiconductor switching elements, such as those using GaN and AlGaN, experience significant ON resistance and power loss at high voltages or large currents, limiting their efficiency.
Innovation Solution
Incorporating a hole injecting unit with an injecting electrode connected to the semiconductor substrate and a drive circuit that applies an injection voltage to inject holes into the hetero-junction interface, enhancing the channel region electron concentration and reducing ON resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a GaN layer and an AlGaN layer are stacked to form a 2-dimensional electron gas layer at the hetero-interface, then the switching element can achieve low ON resistance compared to MOSFET and IGBT, but significant power loss occurs when the voltage applied to the switching element is relatively high or when the current flowing in the switching element is relatively large
Solution Approach 1:
The patent applies parameter changes by injecting holes into the hetero-interface to modify the electron concentration in the 2-dimensional electron gas layer. By changing the carrier concentration parameter through hole injection, the ON resistance is reduced, thereby minimizing power loss at high voltages and large currents while maintaining switching element reliability
2Productivity
If the ON resistance of the switching element is reduced to minimize power loss, then operational efficiency improves, but the complexity of the device increases due to the addition of hole injection structure and control circuit
Solution Approach 1:
The patent employs universality by designing the hole injection structure to serve multiple functions: it reduces ON resistance, minimizes power loss, and can be integrated with existing GaN HEMT fabrication processes. The injection driving unit is controlled by the drive circuit using existing gate voltage signals, allowing the additional functionality to be achieved without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes ON resistance and power loss by increasing electron concentration in the channel region, even at high voltages and large currents, outperforming traditional MOSFET and IGBT configurations.
Implementation Method 1
a 2-dimensional electron gas layer generated in the hetero-junction interface is used as the channel region
Implementation Method 2
the drive circuit has an injection driving unit that injects holes from the hole injecting unit into the hetero-junction interface by applying an injection voltage to the injecting electrode
Data Source
AI summary
The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has hole injecting unit that includes injecting electrode which is directly connected to semiconductor substrate. Injection driving unit of driving unit is connected to injecting electrode and source electrode of switching element, and applies an injection voltage Vin between injecting electrode and source electrode. Injection driving unit injects holes from hole injecting unit to a hetero-junction interface of semiconductor substrate, by applying the injection voltage Vin exceeding a threshold value to switching element. Because the injected holes pull the equivalent amount of electrons to the hetero-junction interface, concentration of the 2-dimensional electron gas as the channel region becomes high, and the ON resistance of switching element 10 becomes small.