GaN ELO Template Separation for Low-Defect Through-Hole Formation
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Solution Overview
Problem
Current methods for manufacturing semiconductor devices using sapphire substrates with GaN buffer layers face challenges in efficiently forming through-holes and separating the semiconductor parts from the template substrate, leading to defects and reduced light emission efficiency.
Innovation Solution
The method involves preparing a template substrate with a mask pattern and opening portions, forming semiconductor parts using the ELO method, and selectively etching the main substrate and semiconductor parts to facilitate separation, while optimizing the etching process to reduce defects and enhance light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-holes are formed in sapphire substrate and GaN buffer layer to take out electrodes, then electrode contact is achieved, but manufacturing complexity and defect risk increase
Solution Approach 1:
The patent segments the template substrate removal process into two distinct stages: first removing the sapphire substrate in regions corresponding to opening portions, then removing the GaN buffer layer in the same regions. This segmentation allows each removal step to be optimized independently, reducing overall manufacturing complexity while maintaining electrode contact reliability.
Solution Approach 2:
The patent applies preliminary action by forming a mask pattern on the template substrate before removing the sapphire substrate. This mask pattern pre-defines the regions where through-holes will be formed, guiding the subsequent substrate removal process and ensuring accurate electrode positioning, thereby reducing manufacturing complexity and defect risk.
2Productivity
If conventional etching methods are used to separate semiconductor parts from template substrate, then separation is achieved, but light emission efficiency decreases due to defects
Solution Approach 1:
The patent applies local quality by using selective etching methods that target specific crystal orientations of the GaN buffer layer. Different etching conditions are applied to different regions based on their crystal orientation, allowing clean separation in some areas while preserving light emission quality in others, thus maintaining high light emission efficiency during separation.
Solution Approach 2:
The patent changes etching parameters (such as etchant composition, temperature, and processing time) to optimize the separation process. By adjusting these parameters, the etching rate and selectivity are controlled to achieve clean separation of semiconductor parts from the template substrate without creating defects that would reduce light emission efficiency.
3Manufacturing precision
If mask pattern with opening portions is used for selective growth, then manufacturing precision improves, but process steps increase
Solution Approach 1:
The mask pattern serves multiple functions: it defines the opening portions for selective epitaxial growth, guides the subsequent sapphire substrate removal, and determines the final positioning of semiconductor parts. This multi-functionality reduces the need for additional alignment and positioning steps, thereby maintaining manufacturing precision without proportionally increasing process complexity.
Solution Approach 2:
The mask pattern is formed in advance on the template substrate before the epitaxial growth process. This preliminary action pre-establishes the geometric constraints and positioning references needed for precise semiconductor part formation, eliminating the need for subsequent realignment operations and reducing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient separation of semiconductor devices from the template substrate, reducing defects and improving light emission efficiency by controlling the etching process and using specific etching rates for polar and semipolar planes.
Implementation Method 1
forming a first semiconductor part on the mask pattern by using an ELO method
Implementation Method 2
a step of removing a portion of the main substrate overlapping the opening portion in plan view and a step of removing a portion of the first semiconductor part overlapping the opening portion in plan view
Data Source
AI summary
A manufacturing method of a semiconductor device includes a step of preparing a template substrate including a main substrate and a mask pattern located above the main substrate and including a mask portion and an opening portion, a step of forming a first semiconductor part on the mask pattern by using an ELO method, a step of removing a portion of the main substrate overlapping the opening portion in plan view; and, a step of removing a portion of the first semiconductor part overlapping the opening portion in plan view.