GaN Transistor Test Circuit for Dynamic On-Resistance Characterization
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Solution Overview
Problem
Existing methods for evaluating the dynamic drain-source resistance of GaN-based transistors are inadequate and not easily adaptable for series testing, particularly in power circuits, which are prone to current collapse due to electron traps and impact performance, especially at high-temperature and low-voltage operations.
Innovation Solution
A test circuit with a control stage that alternates between two configurations to measure the dynamic on-state resistance of GaN transistors, using switch elements and a current sensor, and includes a soaking phase and a drain-source voltage measurement stage, with operational amplifiers and infrared heating for accurate characterization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing methods for evaluating dynamic drain-source resistance are used, then measurement capability is provided, but measurement precision and adaptability for series testing are inadequate
Solution Approach 1:
The test circuit is divided into multiple independent switch elements (first switch element, second switch element, third switch element) that can be independently controlled. This segmentation allows flexible configuration switching and enables the circuit to be adapted for series testing of multiple GaN transistors by sequentially connecting each device to the measurement stage.
Solution Approach 2:
The invention employs dynamic configuration switching through the control stage, which alternates between first and second configurations based on measurement requirements. The measurement switch dynamically connects or disconnects the GaN-based transistor from the drain-source voltage measurement stage during the on-state, enabling precise timing-controlled measurements that improve both precision and adaptability.
2Power
If current collapse phenomenon is present in GaN transistors, then high current density capability is achieved, but reliability deteriorates due to electron traps
Solution Approach 1:
The invention implements a soaking phase before the measurement phase, during which the GaN-based transistor is biased in a specific configuration to allow trap states to fill or empty beforehand. This preliminary action stabilizes the transistor's electrical characteristics and reduces the impact of current collapse during the subsequent measurement, thereby improving reliability assessment under varying temperature and voltage conditions.
3Measurement precision
If dynamic resistance measurement is performed in GaN transistors, then electrical characteristics are evaluated, but thermal stress on components increases
Solution Approach 1:
The test circuit operates by periodically alternating between first and second configurations through controlled switching. This periodic action allows measurement to be performed in short intervals during the on-state, rather than requiring continuous high-power operation. The duty cycle can be adjusted to limit average power dissipation and reduce thermal stress on the GaN transistor and other components while still obtaining accurate dynamic resistance characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a closer representation of GaN transistor behavior in application domains, allowing for precise measurement of dynamic resistance and reducing thermal stress on components.
Implementation Method 1
a branch between the first node and the second node equipped with an inductive load and a current sensor, for measuring a current through this inductive load
Implementation Method 2
with operational amplifiers and infrared heating for accurate characterization
Data Source
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AI summary
The invention relates to a device for evaluating the on-state dynamic resistance of a GaN-based transistor (105), comprising a test circuit equipped with a circuit, said GaN-based transistor (105) forming one arm of said circuit, the device being equipped with a control stage for controlling switch elements (Q1, Q2, Q3) of said circuit so as to alternately put said switch elements (Q1, Q2, Q3) of said circuit into a first configuration and then into a second configuration, the control stage being configured to trigger connection of a drain-source voltage measuring stage (120) to said GaN-based transistor (105) after the circuit has been put into the first configuration, and to trigger disconnection of the drain-source voltage measuring stage (120) from said GaN-based transistor (105) prior to the circuit being put into the second configuration.