GaN Transistor Hole Structure for Lower Thermal Resistance
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Solution Overview
Problem
The high thermal resistance of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) limits their heat dissipation and reduces their performance and service life, particularly in high-power applications like radio frequency and power GaN HEMT devices, where heat accumulation leads to deteriorated characteristics and reduced reliability.
Innovation Solution
A transistor design with a hole structure that includes a first segment with a larger diameter and a second segment with a smaller diameter, filled with heat dissipation materials like silver or diamond, to enhance thermal conductivity and improve heat dissipation by diffusing heat through the material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation materials are filled in a hole with uniform diameter, then thermal conductivity is improved, but filling difficulty increases due to elongated hole geometry
Solution Approach 1:
The hole is divided into two segments with different diameters: a first hole segment with larger diameter and a second hole segment with smaller diameter. This segmentation allows the hole to be filled more easily from the larger opening while maintaining good thermal contact with the active layer through the smaller diameter section, thus resolving the contradiction between heat dissipation efficiency and filling difficulty
Solution Approach 2:
The hole structure uses asymmetric diameter design where the first hole segment has a larger diameter than the second hole segment. This asymmetric geometry provides an easy-to-fill opening while ensuring effective thermal coupling at the bottom, addressing both the filling difficulty and heat dissipation requirements
2Temperature
If thermal resistance is reduced by adding heat dissipation structures, then heat dissipation efficiency is improved, but device structure becomes more complex
Solution Approach 1:
The hole structure serves multiple functions simultaneously: it provides electrical connection between the active layer and back electrode through the conducting layer, and acts as a heat dissipation channel by filling with thermal conductive materials. This multi-functionality reduces the need for separate structures, thereby limiting the increase in device complexity while improving heat dissipation
Solution Approach 2:
The electrical connection function and heat dissipation function are merged into a single hole structure. The conducting layer on the hole wall provides electrical connection, while the heat dissipation material filled in the hole provides thermal conduction, combining both functions in one integrated structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces thermal resistance and junction temperature, enhancing the heat dissipation efficiency and maintaining device performance and reliability, especially in high-power applications.
Implementation Method 1
a heat dissipation material is filled in the hole, to reduce thermal resistance of the device and improve heat dissipation efficiency of the transistor
Implementation Method 2
a conducting layer is formed on a wall surface of each of the first hole segment and the second hole segment, and the conducting layer is electrically connected to the metal layer
Data Source
Figure 1~3
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Figure 6~8A
AI summary
Embodiments of this application relate to the field of semiconductor technologies, and provide a transistor, a semiconductor device package structure, and an electronic device, to provide a process structure and an implementation of a transistor that can reduce thermal resistance. The transistor includes: a substrate, where the substrate has a first surface and a second surface that are opposite to each other, an active layer is disposed on a side of the first surface, and a metal layer is disposed on a side of the second surface; and a hole that penetrates the substrate and at least a part of the active layer, where in a direction from the substrate to the active layer, the hole includes a first hole segment and a second hole segment, a joint between the first hole segment and the second hole segment has a connection interface, a hole diameter of the first hole segment is greater than a hole diameter of the second hole segment, a conducting layer is formed on a wall surface of each of the first hole segment and the second hole segment, and the conducting layer is electrically connected to the metal layer. The first hole segment and the second hole segment are further filled with a heat dissipation material. For example, the heat dissipation material includes at least one of a silver material and a diamond material. A plurality of hole segments are disposed, and the hole is filled with the heat dissipation material, to improve heat dissipation of the active layer.