GaN Semiconductor Transition Layer Thickness Control
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Solution Overview
Problem
The relationship between the thickness of the transition layer in gallium nitride based semiconductor devices and field effect mobility is not well clarified, affecting the performance of these devices.
Innovation Solution
A gallium nitride based semiconductor device with a transition layer of specific thickness, less than 1.5 nm, is formed between the gallium nitride semiconductor layer and the insulating layer, comprising elements from both layers, and a manufacturing method involving the formation of a gallium nitride semiconductor layer, an insulating layer, and a transition layer is developed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transition layer is formed between the gallium nitride based semiconductor layer and the insulating layer, then field effect mobility is improved, but the thickness of the transition layer increases scattering and reduces performance
Solution Approach 1:
The patent applies parameter changes by precisely controlling the thickness of the transition layer to be less than 1.5 nm. This quantitative parameter optimization reduces scattering mechanisms within the transition layer while maintaining its essential function of improving field effect mobility at the interface between the gallium nitride based semiconductor layer and the insulating layer.
Data Source
AI summary
A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.