GaN Voltage Reference Circuit Using Schottky-Gated N-Type HEMTs
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Solution Overview
Problem
Conventional systems face challenges in integrating process, voltage, and temperature stable voltage reference generator circuits due to the lack of P-type transistors in GaN semiconductor processes, leading to increased area, complexity, and cost, as well as unstable reference voltages with poor performance.
Innovation Solution
The integration of GaN semiconductor die-based voltage reference circuits using only N-type transistors, employing a closed loop solution with Schottky diodes at the gate of GaN d-HEMTs, which generate a voltage reference related to a physical constant, providing stability across process, voltage, and temperature variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional voltage reference circuits are integrated using GaN semiconductor processes, then manufacturing cost and device complexity are reduced, but the reference voltage stability deteriorates due to lack of P-type transistors
Solution Approach 1:
The patent changes the fundamental operating parameters by using only N-type GaN HEMTs with Schottky diodes at the gates, replacing conventional P-N transistor pairs. This parameter change enables integration in GaN processes while maintaining voltage reference stability through the physical constant relationship of the Schottky diodes.
Solution Approach 2:
Schottky diodes are introduced as intermediary elements at the gates of N-type HEMTs to generate stable reference voltages. These diodes act as mediators that convert the electrical signals into stable voltage references based on physical constants, compensating for the absence of P-type transistors.
2Area of stationary object
If voltage reference circuits are integrated on GaN semiconductor die, then die area is reduced, but manufacturing precision deteriorates due to process limitations
Solution Approach 1:
The patent changes the device architecture from conventional P-N transistor pairs to N-type HEMTs with Schottky diodes, which are better suited for GaN fabrication processes. This parameter change improves manufacturing precision by eliminating the need for P-type transistor fabrication, which is challenging in standard GaN processes.
3Reliability
If conventional voltage reference circuits are used, then reference voltage stability is maintained, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent extracts and eliminates the P-type transistor component from the voltage reference circuit, retaining only N-type HEMTs and Schottky diodes. This extraction simplifies the device structure and reduces complexity while maintaining functionality through the Schottky diode-based reference mechanism.
Solution Approach 2:
The N-type HEMTs with Schottky diodes serve multiple functions: they act as both the active device and the reference voltage generator. This multi-functionality reduces the number of separate components needed, thereby reducing device complexity while maintaining reference voltage stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a temperature variability of less than 100 ppm/K and good load regulation and power supply rejection ratio, with improved performance and reduced die area, complexity, and cost.
Implementation Method 1
employing a closed loop solution with Schottky diodes at the gate of GaN d-HEMTs, which generate a voltage reference related to a physical constant
Data Source
AI summary
An electronic system is disclosed. The system includes a Gallium Nitride (GaN) semiconductor die and further including, entirely disposed on the GaN semiconductor die i) a voltage reference circuit including GaN semiconductor transistors, the voltage reference circuit configured to generate a reference voltage, and ii) an electronic component including GaN semiconductor transistors and configured to generate a power output based on the reference voltage.