GaN Voltage Reference Circuit for Single-Die PVT Stability
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Solution Overview
Problem
Conventional voltage reference generators are not integrated with other circuits on a single semiconductor die due to instability across process, voltage, and temperature variations, leading to increased area, complexity, and cost, and poor performance.
Innovation Solution
A voltage reference circuit using GaN semiconductor transistors, including an amplifier and feedback stage, generates a reference voltage stable across process, voltage, and temperature variations by leveraging metal-semiconductor junctions in GaN d-HEMTs, utilizing Schottky diodes at different current densities, and a closed-loop solution with high-impedance current-generator components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional voltage reference generators are integrated with other circuits on a single semiconductor die, then area and cost are reduced, but stability across process, voltage, and temperature variations deteriorates
Solution Approach 1:
The patent changes the physical parameters of the HEMT devices by utilizing metal-semiconductor junctions with different contact materials (e.g., TiAlN, TaN, Pt) and different areas (Q times the reference area) to create voltage references that are inherently stable across PVT variations. This allows integration without sacrificing stability
Solution Approach 2:
The patent employs composite material structures combining GaN HEMTs with metal-semiconductor junctions (such as TiAlN/GaN, TaN/GaN, Pt/GaN) to create a voltage reference circuit that achieves both integration compatibility and PVT stability on a single die
2Reliability
If conventional voltage reference generators are not integrated with other circuits, then stability across process, voltage, and temperature variations is maintained, but area, complexity, and cost increase
Solution Approach 1:
The patent merges the voltage reference generator with other electronic circuits (such as DC/DC converters) onto a single GaN semiconductor die, reducing overall system complexity while maintaining stability through the specialized HEMT-based reference circuit design
3Ease of manufacture
If conventional voltage reference generators are not integrated with other circuits, then manufacturing cost is reduced, but area and complexity increase
Solution Approach 1:
The patent combines multiple functions (voltage reference generation and power conversion) into a single integrated circuit on one die, which reduces the total manufacturing cost despite the specialized structures required for the reference circuit
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable reference voltage with temperature variability less than 100 ppm/K and good load regulation and power supply rejection ratio, integrated with other circuits on a single semiconductor die, reducing area, complexity, and cost.
Implementation Method 1
leveraging metal-semiconductor junctions in GaN d-HEMTs, utilizing Schottky diodes at different current densities
Data Source
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AI summary
An electronic system is disclosed. The system includes a Gallium Nitride (GaN) semiconductor die and further including, entirely disposed on the GaN semiconductor die i) a voltage reference circuit including GaN semiconductor transistors, the voltage reference circuit configured to generate a reference voltage, and ii) an electronic component including GaN semiconductor transistors and configured to generate a power output based on the reference voltage.