GaN Epitaxial Wafer Separation for Substrate Reuse
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Solution Overview
Problem
The existing manufacturing method for gallium nitride (GaN) semiconductor devices requires a new GaN wafer for each chip production, reducing productivity due to the need for frequent wafer preparation.
Innovation Solution
A method involving the formation of an epitaxial growth film on a GaN wafer, followed by a surface process on one side and laser irradiation to create a transformation layer, allowing the wafer to be divided into a chip formation wafer and a recycle wafer, enabling the reuse of the GaN wafer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a new GaN wafer is prepared for each chip production, then the quality and consistency of the semiconductor device are ensured, but the productivity is reduced due to frequent wafer preparation
Solution Approach 1:
The patent applies the discarding and recovering principle by separating the GaN wafer from the epitaxial growth film after chip formation. The GaN wafer is discarded as a single-use substrate, while the epitaxial growth film containing the semiconductor elements is recovered and can be transferred to new wafers for subsequent production cycles, thereby reducing the need for continuous wafer preparation and improving productivity
Solution Approach 2:
The patent segments the semiconductor structure into two distinct parts: the GaN wafer substrate and the epitaxial growth film. This segmentation allows the epitaxial film with formed elements to be separated and reused on new wafers, while the original wafer is discarded. This division enables the recovery and reuse of the valuable epitaxial layer, improving productivity without compromising quality
2Manufacturing precision
If the processed wafer is ground to predetermined thickness, then the uniformity of chip thickness is improved, but the manufacturing complexity and time are increased
Solution Approach 1:
The patent applies preliminary action by controlling the thickness of the epitaxial growth film during the epitaxial growth process itself, rather than relying on post-growth grinding. The epitaxial film is grown to the desired final thickness with high precision, eliminating or reducing the need for subsequent mechanical grinding operations, thereby simplifying the manufacturing process while maintaining thickness uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity by allowing the GaN wafer to be recycled and reused, eliminating the need for new wafer preparation with each semiconductor chip production.
Implementation Method 1
a laser beam is irradiated to the processed wafer 10 to form a transformation layer 15
Implementation Method 2
forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions
Data Source
AI summary
A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.