GaN Wiring Layout With Narrow Source Links for Lower Capacitance
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Solution Overview
Problem
Existing semiconductor devices with gallium nitride materials face challenges in reducing planar size and minimizing capacitance between wiring components, which affects performance and efficiency.
Innovation Solution
The semiconductor device incorporates a design where source, drain, and gate wiring parts are positioned on the active region, with narrower connecting parts to reduce capacitance and maintain electrical connectivity, thereby minimizing planar size and enhancing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If wiring parts are positioned on the active region with narrower connecting parts, then capacitance is reduced, but electrical connectivity may be compromised
Solution Approach 1:
The wiring structure is divided into multiple segments: source pad parts, source connecting parts, drain pad parts, and drain connecting parts. Each segment serves a specific function and can be independently optimized. The connecting parts are segmented to provide multiple electrical pathways, ensuring connectivity while minimizing capacitance through controlled geometry.
Solution Approach 2:
Different regions of the wiring structure have different properties: pad parts have larger dimensions for electrical connection, while connecting parts have narrower dimensions to reduce capacitance. The gate electrode is positioned to provide local field control. This local differentiation allows simultaneous optimization of connectivity and capacitance reduction.
2Area of stationary object
If wiring parts are positioned on the active region, then planar size is reduced, but capacitance between wiring components increases
Solution Approach 1:
The wiring structure utilizes vertical layering beneath the gate electrode to achieve compact planar dimensions. By extending wiring parts in the vertical dimension (through the thickness of the nitride semiconductor layer) rather than only in the planar dimension, the device achieves small footprint while controlling planar capacitance through controlled cross-sectional area.
Solution Approach 2:
The wiring parts are nested within the device structure, with source and drain wiring parts positioned within the active region and extending beneath the gate electrode. This nesting allows efficient space utilization, placing multiple functional elements in a compact arrangement that minimizes overall planar size while controlling inter-component capacitance.
3Loss of energy
If narrower connecting parts are used, then capacitance is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The design specifies particular dimensional parameters for the connecting parts (width and length ratios) that optimize the balance between capacitance reduction and manufacturability. By establishing specific parameter ranges rather than extreme values, the design achieves capacitance minimization while remaining compatible with standard fabrication capabilities and tolerance ranges.
Data Source
AI summary
A semiconductor device, includes a nitride semiconductor layer; a plurality of source electrodes; a plurality of drain electrodes; a gate electrode being positioned between source and drain electrodes adjacent to each other in a first direction; an insulating layer located on the plurality of source electrodes, the plurality of drain electrodes, and the gate electrode; and a source wiring part located on the insulating layer. The source wiring part includes a plurality of source pad parts electrically connected with the plurality of source electrodes, and a source connecting part connecting two source pad parts adjacent to each other in the first direction. A width in a second direction of the source connecting part is less than widths in the second direction of the plurality of source pad parts.