GaN X-ray Camera with Ohmic Contacts for High-Resolution Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional GaN-based X-ray radiation detectors are unsuitable for routine use due to their complex structure, insufficient sensitivity, and inability to form practical array arrangements, particularly in dosimetry and medical applications, as they require direct conversion of X-ray radiation into electrical signals and are limited in energy range.
Innovation Solution
An X-ray camera with a simplified array arrangement of GaN-based radiation detectors featuring a thin detector layer (<50 μm) with ohmic contacts, allowing direct conversion of X-ray radiation into electrical signals through resistance or conductivity measurements, enabling sensitive and reproducible detection across a broad energy range (1 keV to 300 keV) without the need for an electrical barrier layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional GaN-based detectors with Schottky contacts and thick layers are used, then X-ray detection is achieved, but the structure becomes complex and sensitivity is insufficient for energies above 20 keV
Solution Approach 1:
The patent changes the contact type from Schottky to ohmic contacts, and reduces the GaN layer thickness from hundreds of microns to less than 50 μm. These parameter changes enable direct conversion of X-ray radiation into electrical signals with improved sensitivity while simplifying the overall detector structure and eliminating the need for complex multi-layer systems.
Solution Approach 2:
The patent extracts and eliminates the electrical barrier layer (depletion region) that was present in conventional Schottky-contact-based detectors. By using ohmic contacts throughout, the detector achieves direct signal conversion without requiring the complex barrier layer structure, thereby simplifying the device while maintaining detection capability.
2Ease of operation
If GaN sensors with light guides are used for X-ray detection, then luminescence detection is achieved, but the structure becomes sensitive and complex, and direct electrical signal conversion is not achieved
Solution Approach 1:
The patent replaces the optical detection system (GaN sensor + light guide + photodetector) with a direct electrical detection system using ohmic contacts. This substitution eliminates the need for light guides and intermediate photodetectors, achieving direct conversion of X-ray radiation into electrical signals and significantly simplifying the detector structure.
Solution Approach 2:
The patent extracts and removes the light guide component from the detection system. By implementing ohmic contacts that enable direct electrical signal generation, the patent eliminates the need for optical coupling components, thereby simplifying the overall device structure and improving ease of operation.
3Productivity
If array arrangements of conventional GaN detectors are implemented, then radiation field mapping is achieved, but the complex structure and calibration requirements prevent routine use
Solution Approach 1:
The patent divides the detector into multiple independent pixel elements arranged in an array, where each pixel comprises a GaN layer with ohmic contacts. This segmentation enables parallel detection across the radiation field while the simplified ohmic contact structure makes each element easy to manufacture and calibrate, facilitating routine use in applications like dosimetry and medical imaging.
Solution Approach 2:
The patent changes the contact configuration to ohmic contacts across all detector elements in the array. This parameter change simplifies the structure of each individual detector element and reduces calibration complexity, making array arrangements practical for routine applications while maintaining the capability for comprehensive radiation field mapping.
4Adaptability or versatility
If thick GaN layers with Schottky contacts are used, then detection is achieved, but the detector cannot handle X-ray energies above 20 keV effectively
Solution Approach 1:
The patent changes the contact type from Schottky to ohmic and reduces the GaN layer thickness to less than 50 μm. These parameter changes enable the detector to effectively handle X-ray energies above 20 keV by allowing direct signal conversion without the energy limitations imposed by thick layers and Schottky barriers, while maintaining detection reliability through the simplified ohmic contact structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides increased sensitivity and simplified operation, enabling miniaturization and effective array arrangements suitable for dosimetry and medical applications, with enhanced detection capabilities and internal amplification properties.
Implementation Method 1
Gallium nitride (GaN) in semiconductor detectors for detecting X-rays... the detected X-ray radiation is directly converted into an electrical measurement signal
Implementation Method 2
allowing direct conversion of X-ray radiation into electrical signals through resistance or conductivity measurements, enabling sensitive and reproducible detection
Data Source
Figure 1A~2
Figure 3A~5
Figure 6~7
AI summary
The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrier substrate (11), and has a thickness of less than 50 μm. The contact electrodes (13) form ohmic contacts with the detector layer (12). The X-ray camera also comprises a retaining device (20) on which the radiation detectors (10) are arranged along a specified reference line or reference surface (21). The invention also relates to a method for capturing an image of an object (2, 3) being examined using X-rays (1), said X-ray camera (100) being used in the method.