GaN FET Laser Pulser Circuit Reduces Ringing

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Solution Overview

Problem

Conventional laser driver circuits experience ringing and instability when operating at short pulse lengths and high frequencies due to parasitic inductance and capacitance, which can lead to reduced pulse recovery and unwanted effects.

Innovation Solution

Incorporating a second field effect transistor (FET) with a body diode that acts as a fast parallel shunt diode and variable capacitor, connected in a configuration that reduces oscillations and eliminates negative voltage development, thereby stabilizing the laser pulser circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a fixed capacitor is used to reduce ringing in the laser pulser circuit, then the ringing is reduced, but the pulse recovery becomes slower

Engineering Contradiction:
ImproveringingVSAvoidpulse recovery speed
Core Design Contradiction:
Object-affected harmful factorsVSSpeed

Solution Approach 1:

The patent applies the dynamics principle by replacing a fixed capacitor with a variable capacitor whose capacitance changes during operation. The capacitor transitions between different capacitance states to provide different functions at different times: at one state it provides high capacitance to reduce ringing, and at another state it provides low capacitance to enable fast pulse recovery. This dynamic adaptation resolves the contradiction between reducing ringing and maintaining fast pulse recovery speed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements parameter changes by varying the capacitance value of the capacitor during circuit operation. The capacitance parameter is changed between at least two different values to achieve different circuit behaviors: a first capacitance value for reducing ringing and a second capacitance value for enabling fast pulse recovery. This parameter variation allows the circuit to optimize performance for different operational requirements.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If conventional laser driver circuits operate at high frequency or repetition rates, then productivity increases, but ringing and instability occur

Engineering Contradiction:
Improverepetition rateVSAvoidcircuit stability
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The patent uses dynamics by implementing a capacitor that can dynamically change its capacitance state in response to operating conditions. When operating at high repetition rates, the capacitor transitions to a state that provides optimal capacitance for stability, preventing ringing and instability. This dynamic adaptation enables the circuit to maintain stability across a wide range of repetition rates, from low to high frequencies.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent applies parameter changes by varying the capacitance value to maintain circuit stability at different operating frequencies. The capacitance parameter is adjusted between different values to compensate for the effects of high-frequency operation, such as parasitic inductance and capacitance interactions. This parameter variation allows the circuit to operate stably at high repetition rates without experiencing ringing or instability.

Inventive Principle:
Principle #35Parameter changes

3Object-affected harmful factors

If the value of the fixed capacitor is increased to reduce ringing, then ringing is reduced, but the circuit complexity increases

Engineering Contradiction:
ImproveringingVSAvoidcircuit complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent applies universality by designing a capacitor that performs multiple functions: it reduces ringing, enables fast pulse recovery, and maintains circuit stability across different operating conditions. Instead of requiring separate components for each function (which would increase complexity), a single variable capacitor structure is used to achieve all these goals, thereby reducing overall circuit complexity while maintaining effectiveness.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent implements merging by combining the functions of multiple capacitors with different values into a single variable capacitor structure. Rather than using multiple fixed capacitors that would increase circuit complexity, the invention merges their functions into one component that can dynamically switch between different capacitance states, simplifying the circuit while achieving the same or better performance.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces or eliminates ringing, enabling the production of stable laser pulses with widths less than 2.5 nanoseconds and increasing the operating lifetime and repetition rate of the laser diode.

Implementation Method 1

Incorporating a second field effect transistor (FET) with a body diode that acts as a fast parallel shunt diode

Methodology Applied
Scientific EffectDiode rectification: Diode

Implementation Method 2

a second field effect transistor (FET) with a body diode that acts as a fast parallel shunt diode and variable capacitor

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS10535977B1GaNFET as energy store for fast laser pulser
Publication Date: 2020.01.14 WAYMO LLC
  • US10535977B1 patent drawing
  • US10535977B1 patent drawing
  • US10535977B1 patent drawing

AI summary

The present disclosure relates to systems and circuits that may facilitate sub-5 nanosecond laser diode operation. An example system includes a trigger source, a laser diode, a first field effect transistor and a second field effect transistor. The laser diode is coupled to a supply voltage and a drain terminal of the first field effect transistor. A source terminal of the first field effect transistor is coupled to ground and a gate terminal of the first field effect transistor is coupled to the trigger source. A drain terminal of the second field effect transistor is coupled to the supply voltage. A source terminal of the second field effect transistor and a gate terminal of the second field effect transistor are coupled to ground. In an example embodiment, the first field effect transistor and the second field effect transistor comprise gallium nitride (GaN).