Gap-Fill Oxide Densification for Void-Free Semiconductor Trenches
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Solution Overview
Problem
In semiconductor device manufacturing, especially for high-integration memory devices, the gap-fill oxide film often suffers from void generation and breakage due to high aspect ratios and low temperature processes, leading to deteriorated electrical characteristics.
Innovation Solution
A method involving a high-pressure oxidation (HPO) process is employed in conjunction with a flowable chemical vapor deposition (FCVD) process to form the gap-fill oxide film, optimizing the internal atmospheric pressure and temperature to enhance film density and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a coating scheme using spin-on-glass (SOG) is used to gap-fill the trench, then the flowing ability is improved, but the gap-fill oxide film contains voids and may break due to insufficient densification and stabilization
Solution Approach 1:
The patent applies high-pressure oxidation (HPO) process with pressure ranging from 1 to 10 atm to transform the gap-fill oxide film structure. This parameter change (pressure) enables densification and stabilization of the film without requiring high-temperature thermal processes, thereby eliminating voids and preventing breakage while maintaining the flowing ability achieved during gap-filling
Solution Approach 2:
The patent uses a composite approach by combining the SOG coating material with subsequent HPO treatment. The gap-fill oxide film is first formed using SOG's flowing properties, then transformed through HPO to create a dense, stable composite structure that retains the filling capability while gaining mechanical integrity
2Manufacturing precision
If chemical vapor deposition (CVD) scheme is used to form the gap-fill oxide film, then the film density is improved, but the gap-fill oxide film may break due to adhesion deterioration and stress during heat treatment
Solution Approach 1:
The patent replaces conventional high-temperature CVD with HPO process operating at lower temperatures (100-400°C) but higher pressures (1-10 atm). This parameter change achieves film densification through pressure-driven oxidation rather than temperature-driven deposition, preventing adhesion deterioration and stress-induced breakage during subsequent heat treatments
Solution Approach 2:
The patent substitutes the thermal-mechanical CVD process with a pressure-driven HPO process. Instead of relying on high temperature and vapor deposition mechanics, the invention uses high-pressure oxidation to achieve film densification, thereby eliminating the adhesion and stress problems associated with conventional CVD
3Ease of manufacture
If plasma and thermochemical deposition are used for gap-filling, then the deposition process is improved, but the process requires high aspect ratio and low temperature which creates a gap-filling limit in narrow trenches
Solution Approach 1:
The patent changes the deposition parameters by using HPO process with pressure from 1 to 10 atm and temperature from 100 to 400°C, replacing plasma and thermochemical deposition. This parameter change enables complete gap-filling in narrow trenches (30 nm or smaller width) by utilizing pressure-driven material transport and oxidation, overcoming the limitations of plasma processes in high aspect ratio structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method significantly reduces void formation and breakage of the gap-fill oxide film, resulting in improved electrical characteristics and increased density of the semiconductor device.
Implementation Method 1
a high-pressure oxidation (HPO) process may be performed, and, subsequently, the HPO process may be performed
Data Source
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AI summary
The present disclosure relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device, according to one embodiment, may comprise a gap-fill step of burying a gap-fill oxide in trenches formed on a substrate, so as to form a gap-fill oxide film. In one embodiment, the gap-fill step can comprise a high pressure oxidation (HPO) step. According to embodiments, a semiconductor device with electrical properties superior to those of a conventional semiconductor device can be manufactured.