Gap-Fill Oxide Formation for Void-Free High-Aspect-Ratio Trenches

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Solution Overview

Problem

Existing semiconductor manufacturing methods face challenges in forming gap-fill oxide films with high aspect ratios, leading to voids and breakage due to stress, which deteriorate electrical characteristics.

Innovation Solution

A method involving a high-pressure oxidation (HPO) process and flowable chemical vapor deposition (FCVD) is employed to form a gap-fill oxide film, using gases like O2, O3, H2O, N2O, CO, and CO2 at controlled pressures and temperatures, followed by planarization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a coating scheme using spin-on-glass (SOG) is used to gap-fill the trench, then the flowing ability is improved, but the adhesion and density of the gap-fill oxide film deteriorate, leading to voids and breakage

Engineering Contradiction:

Improveflowing abilityVSAvoidadhesion and density

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the deposition parameters by using CVD method instead of spin-coating, and optimizes the deposition temperature and pressure parameters to achieve both good flowing ability and high adhesion/density of the gap-fill oxide film

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical spin-coating process with a chemical vapor deposition process, substituting mechanical application with chemical deposition to achieve better film quality and adhesion

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If a chemical vapor deposition (CVD) scheme is used to form the gap-fill oxide film, then the adhesion is improved, but the stress during heat treatment causes deformation and breakage

Engineering Contradiction:

ImproveadhesionVSAvoidresistance to stress-induced breakage

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The patent performs preliminary actions by forming the gap-fill oxide film with CVD before heat treatment, ensuring proper adhesion is established beforehand to withstand subsequent thermal stress

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent applies beforehand cushioning by optimizing the film deposition and heat treatment process parameters to pre-compensate for thermal stress, preventing deformation and breakage during subsequent processing

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Productivity

If the trench width is reduced to 30 nm or smaller for high integration, then the integration density is improved, but the aspect ratio increases causing gap-filling limits in plasma and thermochemical deposition

Engineering Contradiction:

Improveintegration densityVSAvoidgap-filling capability

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The patent replaces plasma and thermochemical deposition methods with CVD method, which provides better material flow and filling capability for high aspect ratio trenches in narrow structures

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the deposition parameters including temperature, pressure, and gas flow rates to optimize the CVD process for filling narrow trenches with high aspect ratios, achieving complete gap-filling without voids

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces voids and increases the density of the gap-fill oxide film, improving electrical characteristics and reducing breakage, resulting in enhanced semiconductor device performance.

Implementation Method 1

a gap-fill process of filling a trench formed in a substrate with a gap-fill oxide, thereby forming a gap-fill oxide film... the gap-fill process may include a high-pressure oxidation (HPO) process

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

the gap-fill oxide film may be generated using a chemical vapor deposition (CVD) scheme... a flowable chemical vapor deposition (FCVD) process using the gap-fill oxide may be performed

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20260040908A1Method for manufacturing semiconductor device

Publication Date: 2026.02.05 HPSP CO LTD

AI summary

The present disclosure relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device, according to one embodiment, may comprise a gap-fill step of burying a gap-fill oxide in trenches formed on a substrate, so as to form a gap-fill oxide film. In one embodiment, the gap-fill step can comprise a high pressure oxidation (HPO) step. According to embodiments, a semiconductor device with electrical properties superior to those of a conventional semiconductor device can be manufactured.