Gap Filling Fluid Composition Control via Plasma Precursors
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Solution Overview
Problem
Existing gap filling fluid-based processes in semiconductor device processing face limitations in material formation, particularly in controlling elemental composition, as they often result in materials with compositions similar to the precursors, and plasma treatments to alter composition can reduce flowability and are impractical for high carbon content materials.
Innovation Solution
A method involving a reaction chamber where a substrate with gaps is exposed to a reaction gas comprising a noble gas and two different precursors, with a plasma generated to form a gap filling fluid, allowing for controlled composition by varying the relative amounts and types of precursors, such as alkali metals, alkaline earth metals, boron, aluminum, carbon, and silicon, and incorporating a curing step to reduce carbon concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If plasma treatment is used to control composition in gap filling materials, then nitrogen and oxygen content can be adjusted, but flowability is reduced
Solution Approach 1:
The patent changes the chemical parameters of the precursor materials by selecting specific compounds with desired elemental compositions (e.g., silane-based precursors for silicon-rich materials, carbon-rich precursors for high carbon content). This allows direct control of the deposited material's composition without requiring post-deposition plasma treatment that would compromise flowability.
Solution Approach 2:
The patent introduces plasma as an intermediary during the deposition process itself, rather than as a post-treatment step. The plasma activates the precursor molecules in situ, enabling controlled composition adjustment while the material is still in the deposition phase, thus preserving flowability in the final material.
2Stability of the object's composition
If plasma treatment is used to alter composition, then nitrogen and oxygen content can be controlled, but carbon is removed making high carbon content materials impractical
Solution Approach 1:
The patent selects precursor materials with inherently high carbon content (such as organic silanes, carbon-containing compounds) and uses plasma-enhanced chemical vapor deposition to deposit these materials directly. This approach preserves the carbon content in the final material, unlike conventional plasma treatment that removes carbon.
Solution Approach 2:
The patent uses readily available carbon-rich precursor compounds that can be easily introduced into the deposition chamber. These precursors are consumed during the deposition process, providing a simple and effective way to incorporate carbon into the gap filling material without complex additional processing.
3Device complexity
If only limited materials are used in gap filling processes, then process simplicity is maintained, but material composition control is restricted
Solution Approach 1:
The patent maintains process simplicity by using a single-step plasma-enhanced deposition process, but achieves enhanced composition control by carefully selecting from a broader range of precursor materials with different elemental compositions. This allows tuning of the deposited material's properties without adding process complexity.
Solution Approach 2:
The patent employs composite precursor systems or mixed precursor approaches, where combinations of different precursor materials are used to achieve desired elemental compositions in the final gap filling material. This enables control over multiple elements (silicon, carbon, nitrogen, oxygen) simultaneously while maintaining a relatively simple deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of gap filling fluids with controlled elemental composition and reduced carbon concentration, enhancing the filling capability and properties of the materials formed, such as improved flowability and thermal resistance, suitable for various semiconductor applications.
Implementation Method 1
generating a plasma in the reaction chamber. Thus, a gap filling fluid is formed that at least partially fills the gap
Implementation Method 2
introducing a reaction gas in the reaction chamber. The reaction gas comprises a noble gas, a first precursor and a second precursor... generating a plasma in the reaction chamber
Data Source
AI summary
Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.