Gap Filling Fluid Thermal Conversion for Void-Free Semiconductor Vias
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Solution Overview
Problem
Conventional semiconductor device scaling techniques face challenges in filling gaps such as recesses, trenches, and vias without forming gaps or voids, which hinders advancements in integrated circuit manufacturing, especially for future technology nodes.
Innovation Solution
A method involving a substrate with a gap is partially filled with a gap filling fluid comprising metals or metalloids, and then exposed to a transformation reactant, undergoing thermal conversion to form a transformed material, utilizing a system with reaction chambers for cyclic processing to ensure complete filling and material transformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional filling methods are used to fill gaps in semiconductor devices, then the filling process can be completed, but voids or gaps form in the filled material
Solution Approach 1:
The patent changes the physical state parameters of the gap filling material by cycling between deposition (forming liquid oligomers) and transformation (converting to solid material). This parameter cycling enables complete gap filling while preventing void formation, as the material transitions from flowable liquid state to solid state in a controlled manner
Solution Approach 2:
The patent employs periodic cycling between two reaction chambers: one for depositing gap filling fluid and another for transforming it to solid material. This periodic action between deposition and transformation phases ensures complete filling without voids, as each cycle advances the material state while maintaining continuous gap occupancy
2Productivity
If gap filling is performed to improve device density, then integration capacity increases, but the process becomes increasingly difficult at future technology nodes
Solution Approach 1:
The patent introduces liquid oligomers as an intermediary state between gaseous precursors and solid filled material. These liquid oligomers flow into gaps to displace air, then transform to solid material. This intermediary approach simplifies the filling process at advanced nodes by using a flowable intermediate that easily occupies gap spaces before solidifying
Solution Approach 2:
The patent utilizes phase transitions of the gap filling material: from gaseous precursor to liquid oligomer (during deposition), then from liquid oligomer to solid material (during transformation). These controlled phase transitions enable easy filling at advanced technology nodes by exploiting the flowable liquid state to occupy gaps before converting to the final solid state
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively fills gaps without voids, enhancing the quality and reliability of integrated circuits by ensuring complete filling and transformation of the gap filling fluid into a solid material, addressing the limitations of conventional techniques.
Implementation Method 1
at least a part of the gap filling fluid is thermally converted into a transformed material
Implementation Method 2
exposing the substrate to a transformation reactant
Data Source
AI summary
Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.