Large-Area Gapfill Plasma Deposition for Seam-Free Features
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Solution Overview
Problem
Existing semiconductor processing methods struggle to fill features with high aspect ratios without forming seams or voids, which can lead to structural issues in semiconductor manufacturing.
Innovation Solution
A method involving atomic layer deposition using silicon-containing and oxygen-containing precursors, controlled by power, pressure, and frequency characteristics to enhance radical density and kinetic energy, followed by a conformal application of non-oxide materials to ensure seamless gapfill.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to fill high aspect ratio features, then the features can be filled with material, but seams and voids form within the filled features
Solution Approach 1:
The patent applies parameter changes by optimizing deposition conditions including using plasma-enhanced chemical vapor deposition (PECVD) with controlled power, pressure, and frequency characteristics. The plasma power source operates at specific frequency ranges (e.g., 2.45 GHz microwave or 13.56 MHz RF) and power levels to control radical density and ion kinetic energy, enabling seamless filling of high aspect ratio features by modifying the physical and chemical state of the deposition process
Solution Approach 2:
The patent employs composite materials by forming silicon-oxide-containing materials through reaction of silicon-containing precursors with oxygen-containing precursors in plasma. This creates a composite deposition process where silicon-based materials (e.g., silane, disilane) react with oxygen to form silicon oxide or silicon-oxide-silicon nitride composite structures, improving material quality and eliminating seams in filled features
2Manufacturing precision
If multiple operations are performed to prevent deformations and unwanted formations, then the quality of structures improves, but the complexity and number of operations increases
Solution Approach 1:
The patent merges multiple deposition operations into a single integrated PECVD process. By combining silicon precursor deposition, oxygen introduction, and plasma activation in one continuous process, the method eliminates the need for separate deposition and oxidation steps, reducing the total number of operations while maintaining high structure quality and preventing deformations
Solution Approach 2:
The patent implements continuity of useful action by performing seamless cyclic deposition where silicon-containing precursor exposure, purging, oxygen-containing precursor plasma exposure, and material formation occur in continuous alternating cycles. This continuous process prevents interruptions and unwanted formations while maintaining consistent material quality throughout the gapfill operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces or eliminates seams in high aspect ratio features, ensuring high-quality semiconductor structure formation by promoting bonding between deposited materials.
Implementation Method 1
providing an oxygen-containing precursor plasma with a power characteristic and at a pressure characteristic based at least in part on a frequency characteristic of a plasma power source
Implementation Method 2
contacting the substrate with the oxygen-containing precursor to form a silicon-and-oxygen-containing material within the feature
Implementation Method 3
contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate
Implementation Method 4
contacting the substrate with the oxygen-containing precursor by forming a plasma with a frequency characteristic and a power characteristic and at a pressure characteristic, wherein the power characteristic, the pressure characteristic, and the frequency characteristic are configured to provide sufficient radical density and kinetic energy
Data Source
AI summary
Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-containing precursor. First operations can include contacting the substrate with the oxygen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate. At least some portions of the first operations can be performed with a frequency characteristic, a power characteristic, and a pressure characteristic.