Garnet Sputtering Target Composition for Stable High-Power TFT Deposition
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Solution Overview
Problem
Existing TFT technologies face challenges in achieving high mobility and stability of thin films, particularly when exposed to heat, due to issues with sintered target materials that can lead to abnormal discharge and reduced performance during the sputtering process.
Innovation Solution
A new garnet compound represented by the formula Ln3In2Ga3-XAlXO12, where Ln includes elements like La, Nd, Sm, and X satisfies 0≤X<3, is used to create a sputtering target with a bixbyite phase, enhancing sintered density, reducing bulk resistance, and improving thermal conductivity, thus preventing micro cracks and abnormal discharge during high-power sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional sputtering target materials are used, then the sputtering process can proceed, but abnormal discharge occurs and sputtering stability deteriorates
Solution Approach 1:
The invention changes the chemical composition parameters of the sputtering target material by incorporating specific ratios of In-Ga-Al-O elements in a bixbyite structure. This compositional parameter change eliminates abnormal discharge and improves sputtering stability while maintaining the desired film formation capability.
Solution Approach 2:
The invention uses a composite oxide material comprising In-Ga-Al-O elements arranged in a bixbyite crystal structure. This composite material approach combines multiple elements to achieve superior electrical resistance properties that prevent abnormal discharge during sputtering.
2Productivity
If high-power sputtering is applied to improve productivity, then film formation speed increases, but micro cracks occur in the target
Solution Approach 1:
The invention optimizes the compositional parameters of the oxide material, specifically the ratios of In, Ga, Al, and O elements in the bixbyite structure. This parameter optimization enhances the mechanical strength and thermal stability of the target, enabling it to withstand high-power sputtering conditions without developing micro cracks.
3Manufacturing precision
If the sputtering target material has high electrical conductivity to improve film quality, then film uniformity improves, but abnormal discharge increases
Solution Approach 1:
The invention precisely controls the electrical resistance parameter of the sputtering target by adjusting the compositional ratios of In-Ga-Al-O elements. The target is designed to have electrical resistance within the range of 10^-5 to 10^-3 Ω·m, which optimizes both film uniformity and prevents abnormal discharge during the sputtering process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new sputtering target material allows for the formation of thin films with high mobility and stability, exhibiting minimal characteristic changes under heat treatment, and enabling high-speed response in TFTs, while preventing abnormal discharge and improving sputtering stability.
Implementation Method 1
a sputtering process of sputtering a sputtering target is preferably used
Implementation Method 2
a sputtering process of sputtering a sputtering target is preferably used
Data Source
AI summary
A garnet compound represented by a general formula (I):Ln3In2Ga3-XAlXO12 (I)(in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).