Gas Bubble Pipe Layout for Uniform Substrate Tank Flow

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Solution Overview

Problem

The flow speed of processing liquid in a process tank is uneven due to the tank's structure, leading to potential processing unevenness on substrate surfaces, particularly in recessed areas of three-dimensional semiconductor elements.

Innovation Solution

A substrate processing device with a substrate holder, process tank, and gas bubble generation pipes featuring discharge holes of varying diameters to uniformly distribute gas bubbles and liquid flow, including first and second discharge holes with different diameters to enhance liquid displacement and suppress processing unevenness.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If gas bubble generation pipes with uniform discharge holes are used, then gas bubbles are generated in the processing liquid, but flow speed unevenness occurs in the process tank due to tank structure

Engineering Contradiction:
Improveprocessing uniformityVSAvoidliquid flow speed uniformity
Core Design Contradiction:
Manufacturing precisionVSSpeed

Solution Approach 1:

The patent applies local quality by varying the discharge hole diameters in different regions of the gas bubble generation pipe. Specifically, discharge holes in different sections have different diameters to compensate for the uneven flow distribution caused by the tank structure, creating locally optimized flow characteristics throughout the processing liquid.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the physical parameter of discharge hole diameter along the length of the gas bubble generation pipe. By gradually varying the hole diameter parameter, the system compensates for structural flow unevenness and achieves more uniform liquid flow distribution in the process tank.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If outer gas bubble generation pipes have larger flow rates than inner pipes, then processing unevenness within substrate surface is prevented, but liquid displacement in recessed areas remains insufficient

Engineering Contradiction:
Improvesubstrate surface uniformityVSAvoidliquid displacement in recess
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent applies local quality by assigning different discharge hole diameters to pipes at different radial positions. Outer pipes have larger discharge holes to provide stronger liquid displacement for substrates at the periphery, while inner pipes have smaller holes, creating a radially varying flow distribution that addresses both surface uniformity and recess penetration.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent introduces asymmetry in the discharge hole configuration, where the hole diameters are not uniform but vary systematically from the center to the periphery of the gas bubble generation pipe array. This asymmetric design compensates for the non-uniform flow patterns inherent in the tank structure.

Inventive Principle:
Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution eliminates flow speed unevenness and suppresses processing unevenness on substrate surfaces, improving yield and processing efficiency.

Implementation Method 1

a plurality of gas bubble generation pipes that generate gas bubbles in the processing liquid by supplying gas in the processing liquid

Methodology Applied
Scientific EffectGas bubble generation: Bubble

Data Source

PatentUS20260077391A1Substrate processing device
Publication Date: 2026.03.19 SCREEN HOLDINGS CO LTD
  • US20260077391A1 patent drawing
  • US20260077391A1 patent drawing
  • US20260077391A1 patent drawing

AI summary

Unevenness of speed at which a processing liquid flows in a process tank is eliminated and processing unevenness within a substrate surface is further suppressed. A substrate processing device includes an outer gas bubble generation pipe and an inner gas bubble generation pipe, and a plurality of discharge holes which each of the inner gas bubble generation pipe and the outer gas bubble generation pipe has includes a first discharge hole having a first hole diameter and a second discharge hole having a second hole diameter that is larger than the first hole diameter.