Gas Cluster Ion Beam Surface Feature Normalization
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Solution Overview
Problem
There is a need to modify surface features of workpieces to normalize properties, correct non-uniformities, or create intentional non-uniformities, which existing technologies cannot effectively achieve using gas cluster ion beams (GCIBs) for semiconductor processing applications.
Innovation Solution
A GCIB processing apparatus and method that uses a vacuum vessel with a source chamber, ionization/acceleration chamber, and processing chamber to form and direct ionized gas clusters, allowing for selective etching or deposition on workpieces to modify surface features, with a dosimetry processor controlling the beam dose and a scanning system for uniform processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional GCIB processing is used for etching or cleaning, then material removal or surface cleaning is achieved, but non-uniformities in surface features and critical dimensions cannot be corrected
Solution Approach 1:
The patent applies local quality by delivering spatially varying doses of GCIB to different regions of the workpiece based on mapped non-uniformities. The system selectively targets specific areas with customized beam parameters to correct local deviations in critical dimensions, rather than applying uniform processing across the entire surface.
Solution Approach 2:
The patent implements preliminary action by first mapping the surface features and identifying non-uniformities before applying the corrective GCIB processing. This pre-characterization allows the system to plan and execute targeted corrections to normalize surface properties before final device fabrication.
2Manufacturing precision
If uniform GCIB dose is applied across the workpiece, then processing simplicity is maintained, but non-uniformities in surface features are not corrected
Solution Approach 1:
The patent applies dynamics by making the GCIB delivery system adjustable and controllable in real-time. The beam dose, scanning pattern, and processing parameters are dynamically modified based on the mapped surface characteristics, allowing the system to adapt to different non-uniformity patterns while maintaining a relatively simple base architecture.
Solution Approach 2:
The patent implements feedback by using measured surface feature data to guide and adjust the GCIB processing parameters. The system closes the loop by comparing actual surface characteristics against target specifications and modifying beam delivery accordingly to achieve the desired uniformity.
3Manufacturing precision
If GCIB is used for selective etching or deposition, then material modification is achieved, but precise control over feature uniformity is not obtained
Solution Approach 1:
The patent applies parameter changes by systematically varying GCIB processing parameters including dose, energy, scanning speed, and beam focus based on the specific non-uniformities detected. This allows precise control over material removal or deposition rates to correct critical dimension variations while maintaining overall process stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively normalizes and corrects non-uniformities in surface features, improving the uniformity of critical dimensions and electrical properties of semiconductor structures, enhancing device yields by precisely controlling the GCIB dose and pattern across the workpiece.
Implementation Method 1
The gas clusters can be ionized by electron bombardment, which permits the gas clusters to be formed into directed beams of controllable energy.
Implementation Method 2
The gas clusters can be ionized by electron bombardment
Implementation Method 3
Gas-cluster ion beams (GCIB's) are used for etching, cleaning, smoothing, and forming thin films
Implementation Method 4
A GCIB processing apparatus and method that uses a vacuum vessel with a source chamber, ionization/acceleration chamber, and processing chamber to form and direct ionized gas clusters, allowing for selective etching or deposition on workpieces
Data Source
AI summary
Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.