Gas Cluster Pressure Control for Fast Stable Substrate Cleaning
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Solution Overview
Problem
Existing gas cluster processing technologies face challenges in quickly reaching the required gas supply pressure and maintaining precise control over the pressure, leading to prolonged stabilization times and potential overshooting, which degrades controllability and affects the efficiency of substrate cleaning processes.
Innovation Solution
A gas cluster processing device and method that utilize a pressure control part with a back pressure controller, including a branch pipe and relief valve, to control the gas supply pressure by exceeding the required flow rate initially and then adjusting to maintain the set pressure, ensuring rapid stabilization and preventing overshooting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If the gas supply flow rate is increased to reach the set pressure faster, then the time to reach set pressure is reduced, but the supply pressure overshoots the set value which degrades pressure controllability
Solution Approach 1:
The patent implements a feedback control mechanism where the actual gas supply pressure is continuously monitored and compared with the target pressure. Based on this comparison, the gas supply flow rate is dynamically adjusted - increasing it when pressure is below target and decreasing it when pressure approaches or exceeds target - thereby achieving rapid pressure attainment while preventing overshoot and maintaining precise controllability.
Solution Approach 2:
The system dynamically adjusts the gas supply flow rate based on real-time pressure conditions rather than maintaining a fixed flow rate. The flow rate control is made adaptive, changing its magnitude according to the pressure deviation from the set point, which enables both rapid response and precise control without overshoot.
2Manufacturing precision
If a pressure adjustment valve is used for fine adjustment of supply pressure, then the pressure precision is improved, but the response time to reach set pressure increases
Solution Approach 1:
The system performs preliminary coarse adjustment of the gas supply flow rate to quickly bring the pressure close to the target value, before engaging the pressure adjustment valve for fine precision adjustment. This two-stage approach combines the speed of flow rate control with the precision of pressure valve adjustment, reducing overall response time while maintaining pressure precision.
Solution Approach 2:
The system dynamically coordinates between flow rate control and pressure adjustment valve operation, transitioning from aggressive flow rate increases for rapid pressure buildup to subtle valve adjustments for precise pressure stabilization, optimizing both response time and pressure precision throughout the pressure attainment process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for rapid attainment of the desired gas supply pressure in a short time, maintaining constant pressure during the cleaning process and enhancing controllability, thereby improving the efficiency and effectiveness of substrate cleaning.
Implementation Method 1
a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion
Data Source
AI summary
There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.