Gas Distribution Plate with Conical Plenum for Uniform Thermal Deposition
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Solution Overview
Problem
Existing gas distribution showerheads in semiconductor processing chambers face challenges in achieving high gas switching speed with uniform temperature and flow distribution, leading to non-uniform deposition and inefficient processing.
Innovation Solution
The design incorporates a gas distribution plate with a faceplate and a backing plate, featuring a conical plenum and internal heat transfer elements to ensure uniform gas flow and temperature control, balancing conductance and uniformity through diffusion bonding or other compatible methods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high velocity gas flow is used for fast switching, then gas switching speed is improved, but flow uniformity deteriorates
Solution Approach 1:
The gas distribution plate segments the gas flow into multiple discrete streams through numerous small apertures (e.g., 100-1000 holes), transforming a single high-velocity jet into distributed flow patterns that achieve both fast switching and improved uniformity across the substrate surface
Solution Approach 2:
The aperture distribution is non-uniform, with different regions of the plate having different aperture densities or sizes tailored to local flow requirements, enabling optimized gas distribution patterns that maintain uniformity while supporting high switching speeds
2Speed
If low conductance is used for fast switching, then gas switching speed is improved, but temperature uniformity deteriorates
Solution Approach 1:
The gas distribution plate employs a nested structure with a faceplate containing apertures and a backing plate with a plenum chamber, where the plenum acts as a thermal reservoir that provides thermal mass to stabilize temperature while allowing rapid gas switching through the aperture array
Solution Approach 2:
The system changes the thermal parameter by incorporating the plenum chamber that increases thermal mass and heat capacity, enabling fast gas switching while maintaining temperature uniformity through thermal inertia and distributed heat transfer across multiple aperture locations
3Productivity
If high velocity gas flow is used, then productivity is improved, but deposition uniformity deteriorates
Solution Approach 1:
By segmenting the gas flow into many small aperture streams, the system achieves fast switching for high productivity while the distributed flow patterns from multiple locations ensure uniform precursor distribution across the substrate, maintaining deposition uniformity
Solution Approach 2:
The system dynamically switches between different gas phases or precursors through rapid valve control of the distributed aperture array, enabling fast cycle times for high productivity while maintaining uniform deposition through controlled flow distribution patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables high gas velocity with uniform temperature distribution across the wafer surface, improving processing efficiency and uniformity by addressing thermal uniformity issues and maintaining compatibility with semiconductor processes.
Implementation Method 1
A plurality of thermal elements extends from the concave portion to contact the back surface of the faceplate
Data Source
AI summary
Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.